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To: Wise who wrote (6535)	12/17/2002 10:37:06 AM
From: Ron	Respond to of 10714

SUNNYVALE, Calif., Dec. 17 /PRNewswire-FirstCall/ -- Cree Microwave, Inc., a subsidiary of Cree, Inc. (Nasdaq: CREE), and a leader in manufacturing high- power, high-performance laterally diffused metal-oxide silicon (LDMOS) RF power semiconductors for the wireless industry, today announced that Hitachi Kokusai has agreed to an extension of the development agreement between the two companies for high power amplifier modules based on the company's LDMOS 8 technology. John Quinn, Cree Microwave Vice President stated, "We are very excited that Hitachi Kokusai has elected to extend the development agreement. We believe the progress we've made with our LDMOS 8 process technology will help enable infrastructure manufacturers achieve significant cost savings in the modular power amplifiers, when commercially available, as a result of the new circuit and device level technologies incorporated into the amplifiers." Hitachi Kokusai Electric is the leading supplier of high power amplifier equipment for 3G networks. The Company's expansive overseas network comprises affiliates and sales offices in Europe as well as affiliates and sales offices in the United States. Cree Microwave designs, manufactures and markets a complete line of high- quality, customizable and cost-effective radio frequency (RF) power semiconductors, the critical component utilized in building wireless power amplifiers for cellular and personal communications services (PCS) infrastructure. The company designs and manufactures laterally diffused metal-oxide silicon (LDMOS) and bipolar power semiconductors for operation up to 2.4 GHz. For more information, visit the Cree Microwave web site at www.creemicrowave.com or call 408-962-7998.