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To: RockyBalboa who wrote (10390)	1/28/2003 7:40:16 AM
From: Crossy	Respond to of 48461

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To: RockyBalboa who wrote (10390)	1/28/2003 9:35:59 AM
From: Bucky Katt	Read Replies (1) \| Respond to of 48461

JMAR Technologies Confirms Performance of Beta Model Collimated Plasma Lithography CPL-TM- Source Tuesday January 28, 8:32 am ET Attainment of Performance Milestone Confirms Ability of Device to Meet Needs of Industry SAN DIEGO--(BUSINESS WIRE)--Jan. 28, 2003-- JMAR Technologies Inc. (Nasdaq\NM:JMAR), a developer of laser produced plasma sources for X-Ray and EUV lithography, today announced that it has achieved a major milestone in its Department of Defense funded Collimated Plasma Lithography (CPL)(TM) technology program, producing 130nm feature sizes using its Beta model CPL(TM) Source. In the tests that produced these results, JMAR's Research Division in San Diego configured the Source's beam line to simulate integration with JMAR's NanoPulsar(TM) stepper. Using a 1X mask supplied by the IBM Advanced Mask Facility in Burlington, Vermont, JMAR achieved lithographic resolution consistent with the needs of the compound semiconductor industry. JMAR is now making preparations to ship the CPL(TM) Source to its Burlington, Vt. Division for integration with its stepper, followed by testing and demonstration of the full system. The company believes that the continued success of its CPL(TM) test program will validate the technology as a viable contender to become the semiconductor industry's choice for a next-generation lithography (NGL) solution. "Our CPL(TM) Source testing makes it increasingly clear that JMAR's technological approach offers the semiconductor industry a relatively straightforward, non-optical approach to sub-100nm lithography," noted Ronald A. Walrod, JMAR's president and chief executive officer. "We believe JMAR's new CPL(TM) Source is just the catalyst needed to erase past industry misgivings about NGL X-ray sources," he said, "and we firmly believe that any chip fabricator looking for reduced feature size at a reasonable cost will be favorably impressed with CPL(TM) as the most attractive alternative. "Now that we have an operable Beta model CPL(TM) Source, a CPL Stepper, and X-ray proximity masks, we are taking on the challenge of getting our message out to an industry that remains focused on 157nm and EUV optical technologies, despite the acknowledged technical challenges and high projected costs," Walrod added. "After initial performance characterization to sub-100nm feature sizes in Burlington Vermont, we will start producing test wafers for prospective customers, initially in the compound semiconductor and specialty silicon markets, to demonstrate the performance, simplicity, and cost effectiveness of CPL(TM).