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Technology Stocks : Lam Research (LRCX, NASDAQ): To the Insiders -- Ignore unavailable to you. Want to Upgrade?

To: Kirk © who wrote (4860)	5/19/2003 10:02:56 PM
From: Proud_Infidel	Respond to of 5867

Lam Achieves ISO 14001 Environmental Management System Registration Monday May 19, 8:15 pm ET Company Becomes One among Only a Few Semiconductor Equipment Suppliers to Receive Certification. FREMONT, Calif.--(BUSINESS WIRE)--May 19, 2003--Lam Research Corporation (Nasdaq:LRCX - News) today announced achieving ISO (International Organization for Standardization) 14001 certification for its environmental management system (EMS) from the National Standards Authority of Ireland (NSAI). The certification identifies Lam as one of a select group of semiconductor equipment companies whose environmental practices are in compliance with the standard. Lam obtained ISO 14001 certification following a thorough review of its environmental program and practices by the NSAI, one of several independent accrediting organizations. The Company is also registered for ISO 9001:2001, the standard for quality management systems. "NSAI's validation of our EMS program with this certification informs our customers and the community that Lam upholds the highest standards of responsible business behavior," said Steve Newberry, Lam's president and chief operating officer. "This registration serves as yet another benchmark for our customers and business associates to use in evaluating Lam's commitment to corporate responsibility and sound business practices." The ISO 14001 international standard was established in 1996 to provide third-party validation of a company's environmental management system to ensure a defined structure for organizations and their partners for managing environmental issues. ISO, a non-governmental organization established in 1947, is a worldwide federation of national standards bodies from more than 140 countries. This press release is based on current conditions and information. Those conditions are subject to change, and Lam's operations are subject to changes in condition, significance, value and effect as well as other risks detailed in documents filed with the Securities and Exchange Commission, including specifically the reports on Form 10-K for the year ended June 30, 2002, and the Form 10-Q for the quarter ended March 30, 2003, which could cause actual results to vary from expectations. The Company undertakes no obligation to update the information or statements made in this press release. Lam Research Corporation is a leading supplier of wafer fabrication equipment and services to the world's semiconductor industry. Lam's common stock trades on the Nasdaq National Market under the symbol LRCX. The Company's World Wide Web address is lamrc.com.

To: Kirk © who wrote (4860)	5/22/2003 5:19:47 PM
From: Proud_Infidel	Respond to of 5867

Xycard denies it infringed Lam's patent Semiconductor Business News (05/22/03 09:42 a.m. EST) HELMOND, The Netherlands - Xycarb Ceramics Inc. here denied it has infringed upon Lam Research Corp.'s patents related to replacement electrodes for plasma-etch reactors. Last week, Lam of Fremont, Calif. filed a patent infringement suit in the U.S. District Court for the Northern District of California, against Schunk Semiconductor and its subsidiary Xycarb of the Netherlands for the alleged unauthorized sale and distribution of replacement electrodes used in Lam's plasma etch reactors. The complaint alleged infringement of Lam's U.S. Patent No. 5,074,456 entitled “Composite Electrode for Plasma Processes.” The suit seeks both preliminary and permanent injunctive relief to prevent Schunk/Xycarb from manufacturing, selling, or distributing the infringing product. In addition to compensatory damages, the complaint also seeks punitive damages and attorney's fees. “Our legal counsel is confident that Xycarb Ceramics' electrode assemblies in no way infringe upon the Lam patents,” said Jacques Paulus, vice president of marketing and sales of Schunk Semiconductor, in a statement. Paulus further commented that Xycarb's products offer both process and monetary advantages over the Lam products and that Xycarb will succeed in continuing to produce and sell its assemblies to its customers. In March of 2002, Lam notified Xycarb that Schunk Semiconductor's electrode assemblies fell within the protective scope of Lam U.S. patent 6,073,577 and to further consider if any such assemblies also infringed Lam's '356 and '456 patents. Xycarb responded by analyzing its electrode assembly protected by its own patents and requesting its U.S. patent counsel to conduct a study of the Lam's patents in question. As Lam's allegations focused on its '577 patent, Schunk Semiconductor notified LAM by a letter of August 20, 2002 that “based on advice of counsel, Xycarb Ceramics had a good faith belief that its electrode assembly does not infringe any of the '577 patent claims.” In a further exchange of letters in October of 2002, Xycarb informed Lam that its electrode assembly does not contain an elastomeric joint. Lam made no further objections regarding the '577, '356 or '456 patents. On March 27, 2003, without prior notice to Xycarb, Lam filed suit against Xycarb, alleging infringement not of the '577 patent, but of the '456 patent. Xycarb filed its answer to Lam's suit on May 14, denying any infringement and seeking a dismissal of the action, an injunction preventing Lam from making threats of infringement against any of Xycarb's customers, and an award of attorney fees and costs. Xycarb's European and U.S. counsel, who reviewed the Lam patents, concluded with regard to the '456 patent that Xycarb's electrode assemblies do not include any indium or other bonding agent as claimed in the '456 patent and do not infringe this patent. Xycarb has patents covering its assemblies in The Netherlands, other EU countries and the U.S.

To: Kirk © who wrote (4860)	6/25/2003 7:48:07 PM
From: Proud_Infidel	Read Replies (1) \| Respond to of 5867

Lam's 2300 Exelan Demonstrates Extendibility to Sub-65 nm for Critical Front- and Backend Processes Wednesday June 25, 7:26 pm ET At multiple customer sites, the industry's leading high-productivity, low CoO dielectric etch system was validated for next-generation 65-nm applications with excellent performance FREMONT, Calif.--(BUSINESS WIRE)--June 25, 2003-- Lam Research Corporation (Nasdaq: LRCX - News) today announced the 2300 Exelan® dielectric etch system's capability for critical front- and backend sub-65-nm applications. At a number of customer sites, the system demonstrated excellent results for challenging applications, including critical front-end HARC and SAC etch and backend in situ low k dual damascene etch, validating the extendibility of Dual Frequency Confined(TM) (DFC(TM)) technology. The 2300 Exelan achieved superior cross-wafer CD (critical dimension), etch depth, and profile control for HARC and dual damascene applications -- potentially increasing the number of good die per wafer. For 65-nm gate mask open applications, the system has the capability to eliminate etch CD bias as well as compensate for lithography variations. For example, CD bias was reduced to less than 10 nm, 3 sigma, in customer tests. Exelan systems have also proven their superior process performance at the 130- and 110-nm technology nodes -- validated by recent market share wins for HARC and SAC etch and continued market leadership for in situ dual damascene applications. "This validation of Exelan's extendibility is great news for our customers who are already benefiting from the system's ability to reduce manufacturing costs significantly for current critical front- and backend applications. Now, they can leverage both their production experience and capital investment for next-generation technologies. In addition, new technologies can be introduced more rapidly because troubleshooting an unproven tool is not required," stated Jeff Marks, vice president of Dielectric Etch at Lam. The 65-nm technology node requires tighter CD control, improved particle performance, and integration of new materials. Exelan's DFC plasma technology meets these challenges by providing two frequencies for process flexibility and a confined plasma combined with in situ Waferless AutoCleans(TM) to eliminate memory effects. Together, these capabilities enable the in situ processing capability pioneered by Exelan systems and provide the superior process results that have made Exelan the industry's leading choice for advanced dual damascene processes. This press release contains certain forward-looking statements which are subject to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Such forward-looking statements relate to process results, future machine performance and the speed with which new technologies can be introduced. Such statements are based on current expectations and are subject to risks, uncertainties and changes in condition, significance, value and effect as well as other risks detailed in documents filed with the Securities and Exchange Commission, including specifically the reports on Form 10-K for the year ended June 30, 2002, and the Form 10-Q for the quarter ended March 20, 2003, which could cause actual results to vary from expectations. The company undertakes no obligation to update the information or statements made in this press release. Lam Research Corporation is a leading supplier of wafer fabrication equipment and services to the world's semiconductor industry. Lam's common stock trades on the Nasdaq National Market under the symbol LRCX. The Company's World Wide Web address is lamrc.com.