To: Lizzie Tudor who wrote (6522 ) 7/21/2003 1:57:02 PM From: Proud_Infidel Respond to of 25522 CVD ahead for low-k at 90-, 65-nm, says Applied By Mark LaPedus Semiconductor Business News 07/21/2003, 12:00 PM ET SAN JOSE, Calif. -- What are the major roadblocks for low-k dielectrics in chip designs? "The big challenge for low-k is integration," said Ken MacWilliams, chief technology officer for the dielectric systems group at Applied Materials Inc. (Santa Clara, Calif.). "It's like when people say: 'It's the economy, stupid.' With low-k, it's the integration, stupid." MacWilliams contends that the 90- and 65-nanometer IC manufacturing nodes will be dominated by low-k films based on chemical-vapor deposition (CVD), which is vying with spin-on technology as the low-k deposition methodology of choice. "We think the 65-nm node will be evolutionary, vs. revolutionary. The most aggressive k-value is expected to be 2.6 at 65 nm," he said. Applied's film, dubbed Black Diamond, with a k-value of 3.0, has been endorsed by Agere Systems, Advanced Micro Devices Inc., NEC, Taiwan Semiconductor Manufacturing Co. and Toshiba Corp., among others. At 65 nm, Applied Materials is readying a film with a k-value of 2.6. At 45 nm, it is targeting k-values of 2.4. The CVD-based low-k road maps from ASM International and Novellus are approximately similar to Applied's, but one player is taking a more aggressive approach. Trikon Technologies Inc. (Newport, Wales) has devised a CVD-based film called Orion, which supports k-values of 2.5 to 2.2. Trikon's technology is being deployed at LSI Logic Corp. and evaluated by Motorola, Taiwan Semiconductor and others at the 65-nm node. "We've demonstrated 1.9 k-value," said Carl Brancher, vice president of corporate development at Trikon. "We're the only CVD company that can do that."