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To: Jdaasoc who wrote (7192)8/16/2003 2:39:56 PM
From: richardred  Read Replies (1) | Respond to of 10714
 
Jdaasoc: I'm not really sure about that, but the technology what you mention is. Maybe someone else might tackle it. I like to keep track of leading edge stuff, and a way to make money off of it. When it comes to understanding the technology . I usually ask my brother, when I can. He's the RIT graduate in computer engineering and electrical. IRF, I know a lot about that company and it's stock (A leader in MOSFET'S). I was a long time stockholder. I was out of it, before the bubble burst market wide. I promised earlier. I would try and stay on topic. I'm somewhat of a business historian. Maybe this old thread I started needs a reviving ?

RR

Subject 52037



To: Jdaasoc who wrote (7192)8/16/2003 10:37:18 PM
From: semi_infinite   Read Replies (2) | Respond to of 10714
 
I suggest you goggle Schottky diodes and find out the > order of magnitude higher breakdown voltages and speeds offered by SiC. The east coast electrical grid can use some of the chips now. IRF doesn't have anything over about 120V fyi.

>>Initially two device types are being sampled, a 600 V, 1 A device and a 600 V, 4 A device. Cree are expecting to ramp up production during the first quarter of fiscal 2002, with additional products to be added over the next year.

In further news, a joint program with Kansai Electric Power Company has yielded record results for several high-power devices. A 6 kV MOSFET and a 5.5 kV JFET had on-resistances that were only 1/25 and 1/65, respectively, of the theoretical limit for the equivalent silicon devices. High voltage SiC PIN diodes have also been demonstrated with blocking voltages up to 19 kV, 50% over the previous record and double that from commercially available silicon devices.