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To: SemiBull who wrote (905)1/28/2004 2:37:41 PM
From: Proud_Infidel  Respond to of 43412
 
'Doped water' could extend 193-nm immersion litho
By David Lammers, EE Times
Silicon Strategies
01/28/2004, 1:45 PM ET

LOS ANGELES -- Researchers speaking here at the International Sematech Immersion Lithography Workshop said they are investigating liquids that may work better than purified water for 193-nm immersion scanners for processing chips.

Bruce Smith, a professor at the Rochester Institute of Technology, said he has studied various forms of "doped water" that have a higher index of refraction than the 1.43 of water. By mixing water with sulfates, alkilis such as cesium, or various phosphates, Smith said he has created ionized liquids that could serve to extend 193-nm immersion lithography.

"As long as we don't poison our graduate students, we might as well go ahead and try it," Smith said, drawing laughter from the nearly 300 attendees at the immersion workshop on Tuesday, Jan. 27th.

Smith and his colleagues at RIT " backed by grants from the Defense Advanced Research Projects Agency, the Semiconductor Research Center, Dutch lithography vendor ASML, and others -- have developed several experimental immersion scanners. Most recently, they have begun working with a 193-nm immersion microscanner, with a field size of about 2 mm. Called the "AquaCat," the system adds water supply and retrieval capabilities to an Exitech microscanner equipped with a Corning-Tropel lens with a numerical aperture of 1.05.

Smith showed patterns with 38-nm lines and spaces at the workshop. He said liquids with a refractive index of 1.6 could extend immersion 193-nm scanners to a 30-nm half pitch, which would serve the industry for the 32-nm node expected to enter early manufacturing at the end of this decade.

That would set up a competition between 193-nm immersion and the extreme ultraviolet (EUV) lithography being promoted by Intel Corp.

Will Conley, a Motorola assignee to International Sematech, said while Smith's group is pursuing inorganic additives to water, a team at Sematech is working with organic materials. "We are trying to seed the idea of other fluids for depth of focus improvements," Conley said.

As light passes through air, the index of refraction is zero, which increases to 1.43 as light passes through purified water. The bending of light rays as they pass through a roughly 1-mm film of water between the lens and the wafer promises to extend the resolution of 193-nm lithography, with a significant boost in the depth of focus.

Conley said if the index of refraction for doped water could be improved to 1.53, it would result in a further 10 percent increase in the depth of focus, compared with water as the immersion fluid. That jumps to a 20 percent improvement for a liquid with a 1.6 index of refraction, which several researchers mentioned as a possible target.

Karen Brown, who headed up Sematech's lithography program from 1994 to 1998 before becoming deputy director of the National Institute of Science and Technology (NIST), said the new liquids are encouraging. "Immersion with water is going to happen over the next two years. But if adding cesium or one of several other additives helps the industry extend 193-nm, then people will do that. It provides an affordable form of lithography," said Brown, who is now a consultant based in Austin, Texas.



To: SemiBull who wrote (905)1/28/2004 2:49:40 PM
From: Proud_Infidel  Respond to of 43412
 
TSMC to deploy immersion litho at 65-nm in '05
By By David Lammers, EE Times
01/27/2004 4:20 PM EST

LOS ANGELES -- Taiwan Semiconductor Manufacturing Corp. plans to introduce immersion lithography for critical layers of the 65-nm node, starting in the middle of 2005, said Burn Lin, senior director of the micropatterning technology division at TSMC.

As announced in December, TSMC has ordered a 193-nm immersion scanner from Dutch lithography vendor ASML (Veldhoven, Netherlands). Plans call for the 193i system to be installed in September at TSMC's Fab 12, a 300-mm facility.

TSMC (Hsinchu, Taiwan) initially plans to use the immersion tool for the poly gate formation and contact layers at the 65-nm node, expected to enter what TSMC calls "risk production" in mid-2005. While some companies plan to use "dry" 193 scanners for the 65-nm node, Lin said "our thinking is that if we have the tool, we would be foolish not to use it."

In an interview here at the International Sematech immersion lithography workshop, Lin said a dry 193-nm tool provides a depth of focus of about 180 nm, while an immersion tool with the same 0.85 NA (numerical aperture) lens is expected to have a depth of focus of about 380-nm. That will allow a much better process window to deal with any lens aberration, tilting or wafer flatness issues, he said.

Lin said he believes 193-nm immersion lithography can be extended much further than earlier expected. Catadioptric lenses, which mix refractive and reflective optics, will further boost the depth of focus. Also, new liquids are being studied that extend the refractive index to the 1.6 regime, compared with 1.43 for purified water. The catadioptric lenses and new immersion fluids, could combine to push the numerical aperture to 1.6 or so.

That would make 157-nm scanners with immersion techniques unnecessary, he said, and could also push out extreme ultraviolet (EUV) lithography so far that it might never be introduced, largely for cost reasons.

"The 193 immersion extensions are much less of a change in the infrastructure than the 157-nm or EUV systems would be. If we can come up with a fluid with a refractive index of 1.6, we can forget about 157 immersion, because that fluid would take 193 immersion into the 22-nm territory. And that makes the EUV people very unhappy," said Lin.

Lin is considered an early pioneer in immersion lithography. He worked on the approach during a 22-year career at IBM Corp., and has promoted immersion lithography for use at TSMC, which he joined in 2000.

During a morning session on Tuesday (Jan. 27) at the Sematech-organized workshop, Bruce Smith of the Rochester Institute of Technology, and Will Conley, a Motorola assignee to Sematech, separately reported on early investigations into new immersion fluids. Doping water with phosphoric acid appears to be the most promising, Lin said.



To: SemiBull who wrote (905)1/29/2004 1:55:01 PM
From: Proud_Infidel  Read Replies (1) | Respond to of 43412
 
Immersion Tech Likely to See the Light

By Jeff Chappell -- Electronic News, 1/29/2004

LOS ANGELES – It would seem work on immersion lithography has moved from proof of concept to being readied for production in less than two years.

Here at R&D consortium International Sematech's third and final workshop on immersion technology, all three of the major litho tool vendors affirmed their immersion tool roadmaps, with production tools slated for 2006.

On top of that, in presentation after presentation on various aspects of the technology, from resists to fluid delivery to tool manufacturing, the conclusions were the same: Additional engineering work remains, but there doesn't appear to be any reason why the technology can't be ready for production at the 65nm node.

Simply put, immersion technology involves placing a layer of fluid between the wafer and the lens of an exposure tool. Aside from the number of engineering challenges this introduces, the technology can potentially provide a number of benefits, such as effectively decreasing the wavelength of the exposure light, and providing a considerable boost to the depth of focus.

But perhaps more importantly, it can preserve the industry's investment in 193nm lithography infrastructure for one or more generations.

Immersion technology has existed for considerably longer than the semiconductor, but only in the last couple of years has the chip industry seriously considered it as a means of extending optical technology once again.

"We have made a tremendous amount of progress," said Sematech immersion litho program chair, Walt Trybula. "We would be wrong to go back and think everything is solid," he said at the conclusion of the workshop. "We have to convert this [engineering solution] into manufacturing. But everything is solid."

Japanese supplier Nikon Corp. confirmed once again that it would be shipping an engineering evaluation tool in Q3 of this year, a full-field tool with a numerical aperture (NA) of 0.85. It plans to have a production-worthy tool with an NA of 0.92 by 2005, and a tool with an NA of 1 by 2006.

Fellow Japanese exposure toolmaker Canon Corp., meanwhile, said that it began building two engineering evaluation systems last year, with its eyes on 2006 for production-ready 193nm immersion tools. The use of immersion technology with 193nm lithography currently appears to have a cost of ownership advantage over the next generation of optical lithography, 157nm technology, said Hideo Hata, a member of Canon's R&D division.

Canon envisions standard 193nm lithography being used in conjunction with reticle enhancement techniques for production at the 90nm node, and 193nm immersion technology used in production at the 65nm and 45nm nodes, Hata explained.

Dutch tool vendor ASML also reiterated that it would be shipping an immersion tool to Taiwanese foundry giant Taiwan Semiconductor Manufacturing Co. in Q3 of this year. Based on the 1250 Twinscan and dubbed the 1250i, ASML's Donis Flagello emphasized that the tool was not an engineering evaluation tool, but a manufacturing tool.

The next step after shipping the first 1250i will be to produce production-ready tools, Flagello concluded.

Don't Count Your Immersion Tools Before They Hatch

While researchers and tool vendors gathered here agree that there are no apparent roadblocks or showstoppers to implementing immersion technology, its adoption is still not a foregone conclusion. As a number of researchers observed here at the workshop, the industry won't have a full grasp of the challenges of implementing the technology in production until wafers are rolling off pilot lines with full-field immersion exposure tools.

Issues with resists and the use of water as an immersion fluid seem to be largely under control, but such things as water purity, lens coating, wafer edge exposures, scanning speeds and bubbles may not throw up technological roadblocks, but could still prove to be challenging headaches.

While other types of liquid besides water or additives to water may be used beyond the 65nm node to increase the refractive index, it appears as if water will be the immersion fluid of choice for the technology's first implementation in production. But it's not just water. Massachusetts Institute of Technology/Lincoln Labs researcher Mike Switkes noted that deionized water doesn't work, nor does buying and storing ultrapure water from an outside source, from a defect standpoint -- substances tend to leach into the water, reducing its effectiveness at transmitting exposure light.

In conducting its immersion R&D, Lincoln Labs had to build its own on-site water purification system. "It was a non-trivial exercise for us, and took some time and some doing," Switkes said.

As for bubbles, if immersion ever proves to have an Achilles heel, it would most likely be because of bubbles in the immersion fluid, which could potentially act as particle defects in terms of exposing a reticle pattern on a wafer.

Bubbles can be introduced during a variety of steps in the immersion lithography process. They can come from air trapped in wafer topography, for instance, or arise from the thermal effect created by the tool's laser pulse. Or they can occur during the injection or removal of the fluid from the space between lens and wafer.

So far, much of immersion research has centered around bubbles, and will continue to do so in the near future. While all of the researchers here concluded that bubbles aren't show stoppers, and indeed may prove to be less of a problem than once thought in some instances, as ASML's Flagello put it, it's a "non-trivial" issue. He identified defect formation along with the high numerical apertures required at the 65nm node and beyond.

While current cutting edge 193nm production tools have lenses with NAs of 0.85, the first production immersion tools, slated for the 65nm node, will have NAs around 1, according to toolmakers roadmaps. The NA will go higher for the 45nm node. But the higher NAs will require more complex lenses and lens designs. Again, this may not a showstopper, per se, but it is another non-trivial issue.