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Technology Stocks : Varian Semiconductor Equipment Associates -- VSEA -- Ignore unavailable to you. Want to Upgrade?

To: robert b furman who wrote (1641)	1/30/2004 12:37:19 PM
From: Proud_Infidel	Respond to of 1929

It's criminal that he gets a paycheck for this "advice"

To: robert b furman who wrote (1641)	1/30/2004 1:43:09 PM
From: dantecristo	Respond to of 1929

Bob - Have you read "Be Careful Who You SLAPP"? Well, if you run down to your local library and check it out, I'm sure you will understand why Dick Aurelio's wife keeps a picture of a younger, more virile man.

To: robert b furman who wrote (1641)	2/10/2004 9:13:22 AM
From: Proud_Infidel	Read Replies (1) \| Respond to of 1929

Varian Semiconductor Wins Follow-On Order from ProMOS for its VIISta 80HP Single Wafer Ion Implanter Tuesday February 10, 9:01 am ET GLOUCESTER, Mass.--(BUSINESS WIRE)--Feb. 10, 2004--Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA - News) announced today that it has received a follow-on order for its VIISta(TM) 80HP high current ion implanter from ProMOS Technologies, Inc. ProMOS ordered the system for its mass production 300mm DRAM fab in Hsinchu City, Taiwan, keeping its commitment to Varian Semiconductor's single wafer, ribbon beam technology in its high current ion implanter processes. "ProMOS is a leading DRAM manufacturer in Taiwan and is positioned as a benchmark in productivity and leading edge technology," said Dr. Len Mei, senior vice president, manufacturing group at ProMOS. "The memory segment is intensely competitive, and we must choose the most cost-effective ion implant equipment for our state-of-the-art 300mm wafer manufacturing facility." "After a rigorous evaluation of competitive tools, ProMOS again selected our VIISta 80HP high current ion implanter based on its demonstrated superior productivity and cost of ownership advantages," said John Aldeborgh, Varian Semiconductor's vice president of sales and marketing. "This order demonstrates the confidence that our customers have in the single wafer VIISta 80HP high current ion implanter to meet their volume production needs." The VIISta platform of ion implanters exceeds 300 wafers per hour, making it the fastest ion implanter platform available. All of the VIISta products feature the Varian Control System (VCS(TM)), the Varian Positioning System (VPS(TM)), and a common single wafer endstation. This high degree of commonality across the VIISta platform facilitates process matching throughout the tool set and provides flexibility in managing capacity, product mix changes, spare parts and training. About Varian Semiconductor Varian Semiconductor Equipment Associates, Inc. is a leading producer of ion implantation equipment used in the manufacture of semiconductors. The company is headquartered in Gloucester, Massachusetts, and operates worldwide. Varian Semiconductor maintains a web site at www.vsea.com. The information contained in the company's web site is not incorporated by reference into this release, and the web site address is included in this release as an inactive textual reference only. About ProMOS Technologies Inc. ProMOS Technologies Inc. was founded in Dec. 1996. It is registered under the law of Republic of China and having its headquarter and manufacturing facilities at Phase III, Science-based Industrial Park, Hsin-Chu, Taiwan. The major products of ProMOS are high density/high performance commodity DRAMs, which include 128Mb/256Mb SDRAM/DDR DRAM. The applications for these products are mainly in personal computer. ProMOS develops derivative products utilizing its core DRAM technologies, among which pseudo-SRAM and low power SDRAM are the current focus. The applications for these products are for hand-held low power consumption devices, such as mobile phone, personal digital assistance, digital still camera, etc. The total production volume accounts for roughly 7% of the worldwide DRAM market. ProMOS has two manufacturing facilities, an 8" fab and a 12" fab. The 8" fab reaches a 44,000 wafers per month capacity and applies 0.14 micron process for volume production, 0.12 micron and 0.11 micron process in pilot run. The 12" fab, one of the leading 12" fabs worldwide, has commenced its commercial production since April 2002. It is currently operating at 0.14 micron process. The current capacity is 13,000 wafers per month and is expected to ramp up to 18,000 wafers per month by July of 2004 using 0.12 micron and 0.11 micron processes. For more information, please visit the ProMOS web site at www.promos.com.tw. Note: This release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the company's performance, market share and technology leadership, technological capabilities and benefits are forward-looking statements and any statements using the terms "believes," "anticipates," "expects," "plans," or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the company's customers; significant fluctuations in the company's quarterly operating results; the impact of rapid technological change; the company's dependence on the development and introduction of new products; the company's concentration on ion implantation systems and related products; concentration in the company's customer base and lengthy sales cycles; the highly competitive market in which the company competes; risks of international sales; foreign currency risks; and general economic conditions; and other factors identified in the company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The company cannot guarantee any future results, levels of activity, performance or achievement. The company undertakes no obligation to update any of the forward-looking statements after the date of this press release. -------------------------------------------------------------------------------- Contact: Varian Semiconductor Equipment Associates, Inc. Susan Torbitt Public Relations and Communications 978-282-2410 susan.torbitt@vsea.com or Mary Wright Director, Investor Relations 978-282-5859 mary.wright@vsea.com -------------------------------------------------------------------------------- Source: Varian Semiconductor Equipment Associates, Inc.

To: robert b furman who wrote (1641)	3/16/2004 9:34:03 AM
From: Proud_Infidel	Read Replies (1) \| Respond to of 1929

Varian Semiconductor and Integrated Systems Engineering Announce Joint Development Agreement Tuesday March 16, 9:05 am ET GLOUCESTER, Mass.--(BUSINESS WIRE)--March 16, 2004--Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA - News) announced today that it has entered into a joint development agreement with ISE Integrated System Engineering AG to develop advanced doping and diffusion models for the continued scaling of semiconductor devices beyond the 90 nanometer node. The advanced doping models for key applications such as low energy implantation and effects of angle control will enable semiconductor manufacturers to use their TCAD capability with greater accuracy leading to faster development of their processes. The models also will help in understanding future doping requirements and applications, thereby allowing Varian Semiconductor to address its customers' needs in a timely fashion with the required product features. "Our joint development work with ISE will encompass the entire doping regime including mixed species implantation with special emphasis on the impact of ion implant angle and low energy implantation as well as plasma doping," said Varian Semiconductor's director of strategic applications, Sandeep Mehta. "As devices continue to scale, precision of dopant placement in the semiconductor device is becoming increasingly important. This requirement translates into precise angle control of the ion beam, which can only be delivered by parallel beam, single wafer ion implanters. The dopant profiles obtained from such implanters are expected to lead to development of more accurate physical doping models". ISE's latest Technology CAD (TCAD) software product coupled with the advanced doping technologies of Varian Semiconductor will enable the two companies to deliver accurate TCAD models to the industry for process and device applications to meet current and future needs of semiconductor manufacturers for scaled CMOS devices. "The collaboration with Varian Semiconductor ensures that our joint customers have predictive TCAD to develop their new technologies," added Lars Bomholt, ISE's vice president of applications. About Varian Semiconductor Varian Semiconductor Equipment Associates, Inc. is a leading producer of ion implantation equipment used in the manufacture of semiconductors. The company is headquartered in Gloucester, Massachusetts, and operates worldwide. Varian Semiconductor maintains a web site at www.vsea.com. The information contained in the company's web site is not incorporated by reference into this release, and the web site address is included in this release as an inactive textual reference only. About Integrated Systems Engineering ISE Integrated Systems Engineering AG is a worldwide, leading TCAD solutions provider. ISE offers TCAD tools and consulting services for the semiconductor industry. Their web site address is www.ise.com. Note: This release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the company's performance, market share and technology leadership, technological capabilities and benefits are forward-looking statements and any statements using the terms "believes," "anticipates," "expects," "plans," or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the company's customers; significant fluctuations in the company's quarterly operating results; the impact of rapid technological change; the company's dependence on the development and introduction of new products; the company's concentration on ion implantation systems and related products; concentration in the company's customer base and lengthy sales cycles; the highly competitive market in which the company competes; risks of international sales; foreign currency risks; and general economic conditions; and other factors identified in the company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The company cannot guarantee any future results, levels of activity, performance or achievement. The company undertakes no obligation to update any of the forward-looking statements after the date of this press release.

To: robert b furman who wrote (1641)	4/20/2004 7:35:58 PM
From: Proud_Infidel	Read Replies (1) \| Respond to of 1929

Varian extended lead in implanters for 2003, says report Silicon Strategies 04/20/2004, 6:25 PM ET SANTA CLARA, Calif.--Varian Semiconductor Equipment Associates Inc. extended its lead in the ion implanter business last year, with 33 percent market share in 2003, verses 29 percent in 2002, according to VLSI Research Inc. Varian was followed by Applied Materials Inc. and Axcelis Technologies Inc. in terms of market share in the ion-implanter arena, according to VLSI Research. Applied's market share fell from 24 percent in 2002, to 22 percent in 2003, according to the Santa Clara-based research firm. Axcelis' share dropped from 24 percent in 2002, to 20 percent in 2003. "Varian performed well in the medium current ion implant market and was the only company to report sales growth in the high-energy-implanter market, according to VLSI Research. "Number two ranked supplier Applied Materials maintained its position from a year ago due to its continued leadership in the high current ion implant market."

To: robert b furman who wrote (1641)	4/28/2004 12:24:42 PM
From: Proud_Infidel	Respond to of 1929

Chartered's 300mm Copper Fab Selects Varian Semiconductor's Single Wafer VIISta 80HP Ion Implanter Wednesday April 28, 12:15 pm ET GLOUCESTER, Mass.--(BUSINESS WIRE)--April 28, 2004--Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA - News) announced today that it has won an order for its single wafer VIISta 80HP high current ion implanter from Chartered Semiconductor Manufacturing, one of the world's top three dedicated semiconductor foundries. The VIISta 80HP will be installed at Chartered's first 300mm manufacturing facility, Fab 7, in Singapore. "The VIISta 80HP supports high productivity and low cost of ownership, which are benefits required for developing next-generation technology solutions," said John Aldeborgh, Varian Semiconductor's vice president of sales and marketing. "We are pleased that Chartered has selected our single wafer VIISta 80HP high current ion implanter for its 300mm manufacturing facility." "Varian Semiconductor's leading-edge VIISta 80HP high current ion implanter is important to our manufacturing goals of optimizing productivity and continuous yield improvements," said Ang Tang Yong, vice president of fab support operations at Chartered. "We are pleased to collaborate with Varian Semiconductor as one of our leading equipment suppliers to support the manufacturing of 90 nanometer (nm) and beyond process technologies on 300mm wafers." "Semiconductor manufacturers around the world are trending towards VIISta single wafer processing because single wafer processing avoids spinning the wafers which can cause particle collision-induced damage and mechanical stress to sensitive devices," said Ernest Godshalk, president and chief operating officer of Varian Semiconductor. "We are pleased to be working with Chartered to meet their next-generation production requirements." The single wafer VIISta platform of ion implanters is the only one to exceed 300 wafers per hour, making it the fastest ion implanter platform available. All of the VIISta products feature the Varian Control System (VCS(TM)), and a common single wafer endstation. This high degree of commonality across the VIISta platform facilitates process matching throughout the tool set and provides flexibility in managing capacity, product mix changes, spare parts and training. About Varian Semiconductor Varian Semiconductor Equipment Associates, Inc. is a leading producer of ion implantation equipment used in the manufacture of semiconductors. The company is headquartered in Gloucester, Massachusetts, and operates worldwide. Varian Semiconductor maintains a web site at www.vsea.com. The information contained in the company's web site is not incorporated by reference into this release, and the web site address is included in this release as an inactive textual reference only. Note: This release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the company's performance, market share and technology leadership, technological capabilities and benefits are forward-looking statements and any statements using the terms "believes," "anticipates," "expects," "plans," or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the company's customers; significant fluctuations in the company's quarterly operating results; the impact of rapid technological change; the company's dependence on the development and introduction of new products; the company's concentration on ion implantation systems and related products; concentration in the company's customer base and lengthy sales cycles; the highly competitive market in which the company competes; risks of international sales; foreign currency risks; and general economic conditions; and other factors identified in the company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The company cannot guarantee any future results, levels of activity, performance or achievement. The company undertakes no obligation to update any of the forward-looking statements after the date of this press release.