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To: Dan3 who wrote (118261)4/4/2004 3:04:58 AM
From: Pravin KamdarRead Replies (1) | Respond to of 275872
 
Dan,

to pravin - This was posted by MrAMD on IH

Thanks for the post.

However, Intel also uses regular and low Vt devices. It hasn't helped them. You can't escape the laws of physics.

Dynamic switching times should be improved due to the lowered junction capacitance that SOI provides, but off currents due to channel leakage should not be affected.

However, should FD SOI provide for an effective back-bias scheme, the channel could be futher, and perhaps effectively, modulated. But, the shallow 'bulk' between the channel and the insulator can not be left floating.

Pravin.