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Technology Stocks : Applied Materials No-Politics Thread (AMAT) -- Ignore unavailable to you. Want to Upgrade?

To: Cary Salsberg who wrote (12226)	11/29/2004 12:20:09 PM
From: Proud_Infidel	Respond to of 25522

Not at all.....I was characterizing the gloom and doom regarding this sector from nearly every research house out there.

To: Cary Salsberg who wrote (12226)	11/29/2004 3:05:56 PM
From: Proud_Infidel	Respond to of 25522

JSR claims to take immersion litho beyond water By Peter Clarke Silicon Strategies 11/29/2004, 11:00 AM ET TOKYO — Japan's JSR Corp. has demonstrated 32-nanometer line and space patterns using an argon-fluoride immersion lithography system the company said Monday (Nov. 29). The work is based on JSR's high refractive index materials solution, based on technology it calls SOLOnX. Thirty-two nanometers is commonly thought to be beyond the capability of water-based ArF immersion systems. JSR believes the introduction of a high refractive index (high n) liquid will extend ArF lithography over two technologies nodes. "This unique material is designed in house using our internal expertise of materials design," said Mitsunobu Koshiba, general manager of the electronic materials division of JSR, in a statement. "We believe this will be commercially viable and SOLOnX technology will offer a highly transparent and low viscosity solution with an ideal refractive index of 1.64." ArF immersion lithography uses the inclusion of a liquid between the optical lens and wafer to achieve, when accompanied by higher NA lens systems, in higher resolution performance. First generation immersion lithography systems use de-ionized water with a refractive index of 1.44 and should achieve 65-nm line and space patterns. JSR is developing new materials for advanced lithography technologies such as spin-on hardmask materials, top coating materials for immersion lithography and ArF resist for high NA dry and immersion exposure, the company said.