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To: Proud_Infidel who wrote (987)	3/2/2005 8:36:59 AM
From: Proud_Infidel	Respond to of 43410

TSMC to accelerate immersion litho in production By Mark LaPedus Silicon Strategies 03/01/2005, 6:57 PM ET SAN JOSE, Calif. — During the SPIE Microlithography conference here on Tuesday (March 1), Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) indicated that it would accelerate its efforts to bring 193-nm immersion lithography into production. TSMC (Hsinchu, Taiwan) plans to move into "risk production" with 193-nm immersion at the 65-node by "the end of the second quarter," said Jack Chen, sector manager of the Exploratory Micropatterning Technology Department at the silicon foundry giant. Late last year, TSMC claimed to have has used immersion lithography tools to produce fully functional 90-nm devices. And in a change from a previous position TSMC said that immersion may be used at 65-nm production and would be the preferred lithography candidate for 45-nm production (see Dec. 22, 2004 story). Now, the company is pushing hard to bring immersion up at 65-nm. During an interview after a presentation, Chen defined "risk production" as being in the early stages of IC manufacturing. Volume production with 193-nm immersion is slated "sometime next year" at the 65-nm node, he said. With its 300-mm Fab 12 plant in Hsinchu, TSMC is using ASML Holding NV's AT:1150i and AT:1250i immersion tools, a line of pre-production 193-nm scanners.