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Technology Stocks : Applied Materials No-Politics Thread (AMAT) -- Ignore unavailable to you. Want to Upgrade?

To: The Ox who wrote (15041)	5/18/2005 2:51:07 PM
From: Proud_Infidel	Respond to of 25522

Fujitsu claims interconnect breakthrough with carbon nanotubes Mark LaPedus EE Times (05/18/2005 2:02 PM EDT) SAN JOSE, Calif. — At the International Interconnect Technology Conference (IITC) next month, Japan's Fujitsu Ltd. is expected to present a paper on a new breakthrough with carbon nanotubes. In the paper, the company claims that multi-walled carbon nanotubes could offer low resistance in interconnect vias for next-generation chip designs. Fujitsu (Tokyo) is investigating the technology for good reason. "Copper exhibits a phenomenon known as electro-migration," according to the company. "At ultra-small dimensions, copper creeps in the direction of current flow, leading to failures." The company claims that nanoscale metallic carbon nanotubes could offer high current densities as compared to conventional technologies. In its research, Fujitsu has fabricated bundles of nanotubes in 2-micron vias. "They connected each tube's inner shells together to form additional conduction channels to reduce resistance," according to Fujitsu. "The result was a total resistance in the same order of magnitude as the theoretical value of tungsten. While that is an order of magnitude higher than that of copper, conceptually carbon nanotubes should offer much better electro-migration behavior." At IITC, Fujitsu will provide more details in a paper, entitled "Low-Resistance Multi-Walled Carbon Nanotube Vias with Parallel Channel Conduction of Inner Shells." IITC is slated from June 6-8 in Burlingame, Calif.