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Technology Stocks : ASML Holding NV -- Ignore unavailable to you. Want to Upgrade?

To: Proud_Infidel who wrote (1073)	1/26/2006 1:37:44 PM
From: niek	Read Replies (2) \| Respond to of 43287

Intel invests in EUV source venture Mark LaPedus EE Times (01/25/2006 7:12 PM EST) SAN JOSE, Calif. — Seeking to accelerate the development of extreme ultraviolet (EUV) lithography, Intel Capital has invested in Germany’s Xtreme Technologies GmbH. Xtreme Technologies recently claimed to have exceeded its target in improving the power output of an EUV light source. It claims to have developed an EUV light source at 800 watts of power in a proof-of-principle experiment from about 120 watts at the start of the project. For EUV to work in volume production, the power output must reach approximately 1 kilowatt by around 2010. EUV lithography is a likely next-generation chip processing technology, based on 13-nm wavelength illumination, allowing chip makers to print features sizes of 32-nm and below on integrated circuits. Xtreme is a joint venture between Lambda Physik AG and Jenoptik. The shares of Lambda Physik were bought by Ushio Inc. of Japan in 2005. The venture is part of a European EUV project called More Moore. The 36-month project began in early 2004 and is led by ASML Holding NV of the Netherlands. For Xtreme, the involvement of Intel Capital is a strategic milestone supporting the development of light sources for EUV. Intel itself is one of the big backers of EUV. "This investment enables us to expand our development efforts and to strengthen our leadership position in the emerging EUV market," said Uwe Stamm, president of Xtreme, in a statement. Keith Larson, managing director of Intel Capital, said: "Intel Capital funding for Xtreme Technologies is aimed at accelerating development and commercialization of EUV light sources for production-worthy EUV photolithography equipment." Intel on on Wednesday (Jan. 25) revealed that it would not use 193-nm immersion lithography at the 45-nm node. Instead, Intel (Santa Clara, Calif.) plans to extend its existing and conventional 193-nm “dry” scanners for use in processing the critical layers at the 45-nm node, said Mark Bohr, senior fellow and director of process architecture and integration at the microprocessor giant.