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Technology Stocks : Varian Semiconductor Equipment Associates -- VSEA -- Ignore unavailable to you. Want to Upgrade?

To: Proud_Infidel who wrote (1778)	7/25/2006 12:21:56 PM
From: Proud_Infidel	Read Replies (1) \| Respond to of 1929

Industry-Leading Memory Manufacturer Selects VIISta PLAD for High-Dose Dual Poly Gate Implant Tuesday July 25, 11:18 am ET GLOUCESTER, MA--(MARKET WIRE)--Jul 25, 2006 -- Varian Semiconductor Equipment Associates, Inc. (NASDAQ:VSEA - News), announced today that it has received a follow-on order for its VIISta(TM) PLAD plasma doping system from an industry-leading DRAM and flash memory manufacturer. The customer selected the VIISta PLAD system for Dual Poly Gate volume production after an extensive in-house evaluation. The evaluation included implanting more than 1,000 device wafers to confirm the electrical yield and device reliability required for the new process, which is currently ramping into production. The Dual Poly Gate implant is an additional process step that is being added to advanced DRAM devices for this customer. The customer chose VIISta PLAD for its unmatched productivity for this extremely high-dose boron implant required to dope this memory manufacturer's polysilicon at a throughput suitable for high-volume manufacturing. "There was a close working relationship with this industry-leading DRAM and flash manufacturer to develop the VIISta PLAD system to meet the challenging cost and yield goals for the Dual Poly Gate implant process," said Gary Rosen, Varian Semiconductor's Vice President of Engineering. "The dose required for this process is many times higher than previous DRAM implant steps. The VIISta PLAD system was unique in the ability to meet the yield goals at a productivity that is suitable for high-volume manufacturing." About VIISta PLAD The VIISta PLAD is a multi-chamber tool built on a platform common with Varian Semiconductor's VIISta family of implanters, the only truly complete platform available that covers all implant segments. The VIISta PLAD implants the entire wafer simultaneously by positioning the wafer directly in a chamber containing plasma of the desired species. A pulsed DC voltage applied to the wafer draws ions from the plasma at a precisely controlled energy, resulting in extremely fast high-dose implants without energy contamination that can destroy sensitive transistors. Pulsing the bias voltage allows the system to automatically neutralize any charge buildup on the wafer surface between pulses and measure the ion dose per pulse using a Faraday for closed-loop in-situ dose control. With throughput up to six times greater than beamline or modified-source beamline technologies, the VIISta PLAD has become the tool of choice for critical low-energy, high-dose applications, such as DRAM polysilicon gate doping. About Varian Semiconductor Varian Semiconductor enables semiconductor manufacturers to pack more, higher performing transistors at lower costs into chips used in the electronics industry. Customers have made Varian Semiconductor the leader in ion implant because of a long history of delivering highly productive, technically advanced, and manufacturing worthy products and services. This enables the advanced chips needed to compete in marketing affordable electronics. Varian Semiconductor is the market share leader in ion implant equipment, operating globally, and headquartered in Gloucester, Massachusetts. More information can be found on Varian Semiconductor's website: www.vsea.com Note: This release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the Company's performance, market share and technology leadership, technological capabilities and benefits are forward-looking statements and any statements using the terms "believes," "anticipates," "expects," "plans," or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the Company's customers; significant fluctuations in the Company's quarterly operating results; the impact of rapid technological change; the Company's dependence on the development and introduction of new products; the Company's concentration on ion implantation systems and related products; concentration in the Company's customer base and lengthy sales cycles; the highly competitive market in which the Company competes; risks of international sales; foreign currency risks; and general economic conditions; and other factors identified in the Company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The Company cannot guarantee any future results, levels of activity, performance or achievement. The Company undertakes no obligation to update any of the forward-looking statements after the date of this press release. -------------------------------------------------------------------------------- Source: Varian Semiconductor