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To: Joe NYC who wrote (220141)12/12/2006 11:55:38 AM
From: Elmer PhudRead Replies (1) | Respond to of 275872
 
Joe

If you are innocent, you don't plea bargain...

You don't seem to understand that this was not a Court of Law. There was no plea because there was no charge. Only a recommendation.



To: Joe NYC who wrote (220141)12/12/2006 12:09:53 PM
From: FJBRespond to of 275872
 
ASML wins 45-nm litho deal at IBM, AMD


Mark LaPedus
(12/12/2006 11:26 AM EST)
URL: eetimes.com

SAN FRANCISCO — At the International Electron Devices Meeting (IEDM) here, IBM Corp. and Advanced Micro Devices Inc. presented papers describing the use of immersion lithography, ultra-low-k dielectrics, and multiple enhanced transistor strain techniques for 45-nm microprocessor designs.
AMD and IBM expect the first 45-nm products using immersion lithography and ultra-low-k interconnect dielectrics to be available in mid-2008. AMD tipped the details last week, when it rolled out its 65-nm microprocessors.

As expected, the two companies plan to use 193-nm immersion scanners from ASML Holding NV. IBM, AMD and others have been exploring the use of 193-nm immersion tools from ASML at Albany Nanotech, a U.S.-based R&D entity.

ASML has also won 193-nm immersion deals at Inotera, IM Flash, Nanya, Samsung, TSMC, among others.

The two companies will also use IBM's low-k film at 45-nm, said John Pellerin, director of logic technology development at AMD (Sunnyvale, Calif.). The film, dubbed SiCOH, has a k value of 2.7.

''AMD is not using any of [Applied Materials Inc.'s] standard films, but rather unique processes to our alliance for 90-, 65- and 45-nm,'' he said. ''Our films parallel the offerings from [Applied Materials] in k value, but with better mechanical properties. Our films do run on the AMAT tooling.''

IBM and AMD have been collaborating on the development of next-generation semiconductor manufacturing technologies since January 2003. In November 2005, the two companies announced an extension of their joint development until 2011 covering 32-nm and 22-nm process technology generations.

The two companies have a different strategy than Intel Corp. As reported, Intel revealed that it would not use immersion lithography to characterize its chips at the 45-nm node.

Instead, Intel (Santa Clara, Calif.) plans to extend its existing and conventional 193-nm wavelength ''dry'' scanners for use in processing the critical layers at the 45-nm node. Intel is expected to use 193-nm immersion tools at 32-nm.