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To: neolib who wrote (228900)3/25/2007 5:47:46 PM
From: Sarmad Y. HermizRead Replies (2) | Respond to of 275872
 
You said you read the paper and foun it interesting. What does the following mean (tenth paragraph from top) ?

variation is shown to be due to the atomistic nature of the dopants in MOSFETs [3]. The implant and annealing processes result in the placement of a random number of dopants in the channel (described by a Poisson distribution) and in the random positioning of the atoms that are present,

research.ibm.com

Does this not mean a process will end up with variation in the results that are not due to defects, but are due to randomness in how atoms arrange themselves ?



To: neolib who wrote (228900)3/25/2007 6:42:35 PM
From: tecate78732Read Replies (2) | Respond to of 275872
 
I'd rather you explained, as you are a graduate of Standford and all you should easily be able to explain this process in easy to understand terms.

(my best friend works in Fishkill btw)


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