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To: neolib who wrote (228904)	3/25/2007 6:12:37 PM
From: Sarmad Y. Hermiz	Read Replies (1) \| Respond to of 275872

>> Did you see the 3D graph of ion distribution in the gate & channel (blue & red dots)? Moving any single atom in there is not going to do anything. Yes I did. You said 100 atoms. This link, also quoting an IBM person mentions 14 atoms. And I read that Intel's 45 nm has some structures that are 2 atoms thick. vlsicad.ucsd.edu "If you look at SiO2; (silicon-dioxide) thicknesses, for example, we're talking about 14 atoms or so in today's high-end processes," says Leon Stok, director of the electronic design business for IBM's Systems and Technology group. "If you're off by one or two atoms, you're suddenly off by 10% or 20%. Before, this wasn't an issue. We think we're seeing the limits of some of the physical phenomena we tend to deal with." ----------- And this from the link you posted. Another source of intrinsic device variability arises from atomic-scale oxide thickness variations. Physical gate oxide thickness is currently down to 1 nm, equivalent to approximately five inter-atomic spacings.