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To: neolib who wrote (228909)	3/25/2007 9:35:21 PM
From: combjelly	Respond to of 275872

"if you are looking for process variation that is approaching single atom issues, it looks like channel implant is the critical one by a wide margin." Which makes sense when you think about it. Gate oxide is a vapor deposition of polysilicon, followed by an oxidation step. Implant is going to require the injection of ions into the crystal lattice of the wafer. Given the relatively small number, there is going to be variation depended in the exact energy, where it hits on the electron shell of the atoms in the lattice, the exact state of the electrons in the shell, etc. For a large population, it averages out. As the number decline, the scattering becomes more pronounced.