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To: Joe NYC who wrote (1625)6/6/2007 5:44:44 PM
From: bobs10  Respond to of 4590
 
you:

I think you are right. I was a little surprised to hear very little about phase change during the CCs announcing JV.

me:

On the phase change thingy, If it was any where near reality you can bet INTC would have held the exclusive rights.

I remember reading about Ovshinsky's bubble memory in Popular Mechanics magazine as a young person in the 50's/60's and that was a very long time ago.

It seems that it's a lot easier to store data with a laser on chalcogenide based storage than to do it electrically. I've stopped holding my breath, I'm in the here and now camp on that subject. Not that that "phase change" is the only non volatile memory replacement tech being developed. Something is going to come along eventually but there are enough hobgoblins out there without us having to manufacture any.

In the meantime anyone heard/read any more about what SPSN is doing with MirrorBit DDR?

eetimes.com

From the article:

Doller told the meeting that Intel's 128-Mbit phase-change memory had demonstrated 100 million read-write cycles of endurance and a capability for much greater than 10 years data retention. "The phase-change memory gets pretty close to Nirvana," Doller said. "It will start to displace some of the RAM in the system."

Me again:

Any one seen/heard anything about the "Nirvana" samples that were supposed to be making the rounds in H107? That's the sort of information I'll react to, no bogymen.