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To: nolimitz who wrote (53867)	6/30/2007 9:51:09 PM
From: etchmeister	Respond to of 53903

Cu had very very if any real advantages over Al. From "electrical point of view" copper was not mandatory but at 65nm the roadmap calls for copper - even for DRAM; Al 4% Cu doesn't work - in order to accomplish step coverage you need to sputter/deposit Al/Cu at very high temperatures - and that causes problems in etching the film. So it's an "integration" issue. Besides it's not easy to deposit dielectric after metal etch because of aspect ratio. shorts between metal lines due to PR scumming; corrosion, voids in filling... dual damascene: you cut a trench into the dielectric and than you backfill with copper followed by CMP.