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To: etchmeister who wrote (3669)	9/10/2007 11:00:54 PM
From: etchmeister	Read Replies (1) \| Respond to of 3813

Micron DDR3 The Micron 1-Gbit DDR3 sample's die size is 102 mm2, and it has 38 percent cell efficiency. Micron's 6F2 cell, with an area of 0.0365 µm2, is the smallest DRAM cell that Semiconductor Insights has analyzed. It appears that use of copper interconnect for metal 2 and metal 3, combined with smaller cell size, helped Micron designers achieve desired performance with 1-Gbit DDR3 design. Despite there being a long distance for signals to travel in the larger die, relatively low resistivity and a low-profile copper interconnect helped reduce signal resistor-capacitor (RC) delay as well as power consumption.