Hyundai and Mitsubishi Deliver First SLDRAM Test Chip to Memory Consortium; Open Industry Group is on Schedule for Next-Generation High Performance DRAM Designs
Business Wire - October 31, 1997 07:02
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SAN JOSE, Calif.--(BUSINESS WIRE)--Oct. 31, 1997--The SLDRAM Consortium, the open industry standards organization offering the broadest range of solutions for memory system requirements, today announced receipt of SLDRAM test chips from Consortium members Hyundai and Mitsubishi.
The arrival of the test chips is the Consortium's next step in meeting market demand for next-generation, open DRAM designs beyond the new Double-Data-Rate SDRAM (DDR SDRAM) now just sampling.
The SLDRAM chips, when installed in test boards, will identify appropriate signal and system design constraints needed to achieve 400Mbps data rates and beyond for initial production SLDRAMs.
The Hyundai and Mitsubishi test devices are essentially a controllable chip used to emulate both the controller chip and the SLDRAM chip. They provide several control signals for selecting operating modes such as programmability, internal clock delays and the signal swings of push-pull output. They will help validate the SLDRAM specifications for I/O interface, critical function blocks and timing margins.
"The arrival of these test devices from our suppliers was right on time," said Farhad Tabrizi, Chairman of the SLDRAM Consortium, "Validation of the design spec is proceeding on schedule."
The Consortium announced public availability of specifications for a 400Mb/s/pin 64Mb SLDRAM on September 15. The device spec represents the first generation SLDRAM. The development of a 64M SLDRAM is in advanced stages at MOSAID Technologies Inc., Kanata, Ontario, Canada, with the participation of other Consortium members' engineers.
Background
The SLDRAM Consortium is an open, non-profit industry association with the objectives of cooperatively developing an open DRAM specification with the largest memory capacity at the lowest possible cost.
The Consortium believes this can be achieved by optimizing the process and the design to minimize manufacturing cost and by ensuring that the resulting devices can best serve high-volume markets though high-volume manufacturing thus achieving the greatest economies of scale.
SLDRAM is a general purpose, high-performance DRAM, serving the requirements of all major DRAM applications. It is designed for computer main memory, in desktop, mobile and high-end servers and workstations. SLDRAM offers high sustainable bandwidth, low latency, low power, user upgradeability and support for large hierarchical memory configurations.
For video, graphics, and telecommunications applications SLDRAM provides multiple independent banks, allowing fast read/write bus turn-around, and the capability for small fully pipelined bursts.
Consortium members include: Apple Computer, Fujitsu Ltd. Hewlett-Packard Company, Hitachi Ltd., Hyundai Electronics Industries Co., Ltd., IBM Microelectronics, IBM World Procurement, LG Semicon Co., Ltd., Matsushita Electric Co., Micron Technology, Mitsubishi Electric Corp., MOSAID Technologies, Mosel-Vitelic, Motorola, NEC Corp., Nippon Steel Corp., Oki Electric Industry Co., Ltd., Samsung Electronics Co., Ltd., S3, Inc., Siemens, Texas Instruments, Inc., Toshiba Corp., Vanguard International Semiconductor, VLSI Technology.
Visit the SLDRAM Consortium at www.sldram.com .
CONTACT: SLDRAM Consortium
Farhad Tabrizi, 408/232-8338
ftabrizi@hea.com
or
Marketing/PR Savvy
Ford Kanzler, 650/726-1055
ford@prsavvy.com |
