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To: etchmeister who wrote (3770)	1/13/2010 10:26:33 PM
From: etchmeister	Respond to of 3813

Samsung, Hynix raise bets on mobile chips Korean chipmakers Samsung Electronic and Hynix Semiconductors yesterday unveiled higher-capacity memory chips for mobile applications to cope with the fast-growing market for portable devices. Samsung yesterday launched its new NAND flash memory chips, which it said are able to store 64 Gigabytes of data, nearly double the capacity that its predecessor offers. It is the first time that internal memory capacity has surpassed that of the external memory card. The "64GB moviNAND" will be used to store information in high-capacity mobile devices such as smartphones and digital camcorders, Samsung said. The new chips, which were made based on the most advanced 30 nanometer-class technology, will also allow the company to reduce chip sizes and manufacturing costs, Samsung said. The company also said it has developed a 32 gigabytes external memory card for mobile devices for the first time, using the 30 nanometer-class process technology. The 32GB microSD is able to store twice the data than the existing 16GB microSD, which is made based on 40-nanometer-class technology, Samsung said. At the same time, the new chip is the same size as its predecessor. "The two products will lead the trend for large-capacity, high-performance mobile devices, and lead the growth of the NAND flash market," a Samsung executive said. Hynix said that it developed the industry's first 2 gigabit mobile DRAM chip, which is used in smartphones, smartbooks, tablet PCs and other next-generation mobile applications. Mobile DRAM, short for mobile dynamic random access memory, is used to temporarily store data when a system is running. The "2Gb low power DDR2," which was made based on the 40 nanometer-class technology, operates at the lowest voltage of 1.2, and consumes 50 percent less power than conventional low power DDR chips, Hynix said. (hjjin@heraldm.com) By Jin Hyun-joo