SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : AMD:News, Press Releases and Information Only! -- Ignore unavailable to you. Want to Upgrade?

To: Maxwell who wrote (1916)11/4/1997 10:04:00 AM
From: Yousef  Respond to of 6843
 
Maxwell,

Re: "How small of the
polygate length you can go down to with TiSi?"

Poly linewidths of .22um -> .25um can be silicided (TiSi2) and one can
achieve about 5 ohm/square on these dimensions. The harder areas to
silicide are the heavily doped source/drain regions. Particularly a
narrow poly space (.40um) with an .08um spacer on each side, leaving
a .24um source/drain.

BTW, the nominal poly linewidth for a competitive .25um process should be
about .22um.

Make It So,
Yousef


HomeMailHotSubjectMarksPeopleMarksKeepersSettings
Terms Of UseContact UsCopyright/IP PolicyPrivacy PolicyAbout UsFAQAdvertise on SI
© 2026 Knight Sac Media.  Data provided by Twelve Data, Alpha Vantage, and CityFALCON News