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Technology Stocks : Ultratech Stepper -- Ignore unavailable to you. Want to Upgrade?

To: James Connolly who wrote (1765)	11/22/1997 1:17:00 PM
From: Justa Werkenstiff	Read Replies (1) \| Respond to of 3696

James: P-GILD Links: llnl.gov solid-state.com From Lawrence Livermore National Lab: Semiconductor Processing: shallow junction formation Among the novel silicon processing technologies LLNL has developed is a new doping process for the formation of shallow junctions, Gas Immersion Laser Doping (GILD), which is compatible with sub-0.20 micron feature sizes, which cannot be fabricated using ion implantation. The GILD process is also compatible with the SEMATECH/ARPA flexible fab or cluster tool concept. The laser doping process results in box-like n+ and p+ impurity profiles that are very shallow (<< 100 nm) and abrupt, with very high concentrations (10^18-10^21 cm^-3). These junctions are ideal for the source/drain regions of bulk CMOS devices. The small thermal budget prevents unwanted diffusions of other impurities, which can degrade device performance, from occurring during source/drain formation. Shallow (< 30nm) n+/p and p+/n diodes with virtually ideal forward currents (1.02 < h < 1.07) and very low reverse leakage currents (< 5nA/cm^2 at -5V) have been fabricated, as well as the source/drain doping for NMOS and PMOS transistors with submicron gate lengths. LLNL is developing a projection version of GILD, together with Ultratech Stepper under funding from ARPA and SEMATECH, which could be integrated easily into both conventional and flexible fabs. P-GILD appears in the new SIA roadmap as one of the leading candidates for shallow junction fabrication.