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To: FJB who wrote (1327)	11/25/1997 4:05:00 PM
From: Bookdon	Respond to of 2946

Thanks. I think that this technique uses electron apertures which act as "mini masks" for rapid exposure of certain repeating shapes. It may offer an alternative to x-ray or EUV at 0.13 microns, but that seems like a long shot.

To: FJB who wrote (1327)	11/28/1997 10:26:00 AM
From: D.J.Smyth	Read Replies (1) \| Respond to of 2946

Robert <<It provides 1.4 times the conventional speed of transfer of circuit lines and other components, so that where about three 200 mm wafers could be processed in an hour now 10 wafers can be processed.>> current krf excimer lasers can process 20 wafers per hour, twice the amount of this hitachi beam. so this announcement is still a long way from competing with krf even though line widths appear smaller. remember that silicon valley has successfully tested krf at .09 line widths and will make their announcement regarding this instrument in the next couple of months; don't know exactly when the announcement will come regarding having a producing ready instrument at .09 utilizing at least as many wafers per hour as the hitachi if not more