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To: FJB who wrote (10987)	12/4/1997 3:04:00 PM
From: Paul Dieterich	Read Replies (1) \| Respond to of 25960

Bob, I'll say thanks also. Sorry if it sounded like I was getting on a soap box. It's just that I have developed a solid faith in the collective intellegence of this thread. Regards, --PD

To: FJB who wrote (10987)	12/4/1997 3:13:00 PM
From: Paul Dieterich	Respond to of 25960

Trouble in X-Ray land?..... Japan's X-ray lithography project needs a boost, says R&D manager A service of Semiconductor Business News, CMP Media Inc. Story posted at 2 p.m. EST/11 a.m. PST, 12/4/97 By Jack Robertson CHIBA, Japan -- The R&D head of Japan's advanced lithography consortium, called Aset, told attendees at Semicon Japan that the country's 30-year involvement in X-ray stepper development "is straying off course" and must be strengthened to fill the gap when 193-nanometer wavelength deep UV systems reach their technical limit, around 2002. "Unfortunately X-ray has been considered a technology that would not be missed if it were not developed," lamented Akihiki Ishitani, general manager of R&D for the Association of Super-Advanced Electronics Technologies (Aset). But, he said, despite its tortorous history, X-ray offers the most promise in filling the need until one of several other candidates are fully developed--Intel's extreme ultraviolt (EUV)project, Lucent Technologies' Scalpel direct write e-beam or the European ion projection equipment. "The unfortunate aspect of X-ray research results from the fact that LSI chip researchers did not take part. There are no past examples of X-ray research being conducted from the perspective of process integration," Ishitani said. "The time and cost required for this (process) effort is estimated to be three years and $40 million (5 billion yen)." he added. The Aset R&D official was equally realistic about direct write electron-beam lithography, also being pushed by Japanese industry and Aset. "It is difficult for direct write electron-beam to become a major player in lithography at the 100 nanometer (0.1-micron) level, given limitations in throughput," he said. Nevertheless he felt the technology might be another candidate to bridge between optical and 0.1-micron systems.