Good Evening: I received a fax today from another investor in APAT who had received the following news release by regular mail. I really do not understand why the article is For Immediate Release, dated January 26, 1998 and has not been picked up by any newswires.
Last evening I E-Mailed The Wallace Group (www.wallacegroup.com) asking why the release had not been picked up by the newswires. Of course, I did not receive an answer from The Wallace Group, just as I have not received an answer to any of the questions I have E-Mailed over the past 30 days.
I am typing in the press release so any misspellings or errors in puncuation are probably mine and the release is rather lengthy so I have edited a few things. I am not the fastest at this and don't want to be here all night.
NEWS FROM THE WALLACE GROUP
APA Optics, Inc. For Immediate Release
"APA OPTICS, INC. INTRODUCES NEW GALLIUM ARSENIDE ULTRAVIOLET DETECTORS, BREAKING NEW GROUND IN RESPONSIVITY HIGH TEMP OPERATION AND ABILITY TO WORK IN VISIBLE LIGHT."
"APA now accepting orders for Schottky UV-detector expected to gain wide acceptance for monitoring, control and fire system applications in the manufacturing, medical, aerospace and defense sectors."
"After years of leading edge research on the use of Nitride materials in sophisticated optoelectronics, APA Optics, Inc. is introducing a new, high response ultraviolet detector, the first of a series of Gallium Nitride (GaN) products and services for the optoelectronics and microelectronics industries."
"APA Optic's UV-2500 series of detectors have responsitity up to five times greater than equivalent phototubes. "A primary advantage is the detector's solar blind characteristic," said Anil K. Jain, APA's president and chief executive officer." "These GaN ultraviolet detectors are far more effective operating in visible light than their Silicon counterparts." He notes that Silicon detectors have a major limitation, in that these are more responsive to the unwanted visble light than ultraviolet light. On the other hand, GaN detectors are more responsive to the ultraviolet light than the visible light. "It is the ultraviolet light levels that we wish to detect," said Jain.
"Another major benefit is the ability of these Schottky barrier detectors to operate in high temperature environments. The GaN detectors can operate at temperatures up to 300d Centigrade, as opposed to the ceiling maximum of 150d C. for silicon detectors."
"Application for GaN detectors include flame sensing, ozone monitors, pollution monitors, blood analyzers, mercury lamp sterilizer monitors, laser detectors, and other application that require solar blind characteristics. Jain said the company is now accepting orders for these detectors and that there are short lead times for delivery. The UV-2500 Schottky detectors will be fabricated at APA's new optoelectronics manufacturing center in Aberdeen, South Dakota, although some initial production is being carried out at the company's headquarters in Blaine, Minn."
"The GaN material for the Schottky detector is created through the processing of epitaxial (EPI) layers, extra thin, uniform crystal layers that are used in a number of optoelectronic applications. The current devices, the first of several GaN products with potential for widespread application, are used primarily in low cost UV radiometry systems, flame sensing and UV exposure meters."
"Additional EPI layers are being produced for the company's product development work on heterostructure field effect transistors (HFETs). The key advantages of GaN based HFETs are their abilities in high temperature and high power operations. Applications of GaN HFETs include: high temperature and high power switches, high power RADARS, Cellular Ground Stations, Staellite Communications and high termperature pressure sensors."
"These HFETs also can be used as high temperature pre-amplifers to increase the gain of GaN based UV detectors, so that the hybrid/HFET combination may be used as a very effective flame sensor, operable at high temperatures, up to 225d to 300d C. It may be noted that state-of-the-art HFETs using other materials will be limited to 150d C operation."
"APA Optics, Inc. has been awarded two patents in HFET technology. The company also has applied for patents on all of its project developments accomplished during the past year. As an outgrowth of its wide ranging experience in GaN applications, the companys researchers have published numerous papers on Nitride applications in respected international scientific journals."
"The Schottky barrier detectors have a sharp cutoff wavelength above 365 nm and require no external filters for most applications. The detectors operate in a high speed photovoltaic mode and are packaged in standard TO-5 cans."
"Further information on the company and marketing activity may be obtained from the company's Blain, Minn. headquarters office, (612-784-4995), while sales orders may be placed directly through the Aberdeen manufacturing center, (605-225-1177)."
APA Optics, Inc. manufactures and markets advanced products for the fiber optic communications, optoelectronics and laser industries, including wavelenght division multiplexed (WDM) components, ultraviolet (UV) detectors, nitride epitaxial layers and custom optics."
That is the release in its entirety. There has been no activity on this thread for quite a while. I am hoping Craig or someone with a bit of knowledge in this area would give a brief synopsis of the release.
Jim |
