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To: Paul Engel who wrote (3829)	1/15/1998 1:30:00 AM
From: Yousef	Read Replies (2) \| Respond to of 6843

Paul, Re: "...there was less wet etching steps in the CS44E (0.25 process) therefore it should have higher yields than their current process." What a bunch of horse manure ... there are many wet process steps in a .25um process just like a .35um process. In fact, with point of use filtration on benches and acid processors, these should be very clean steps. Here are some/most of the wet steps in a .25um process: All lithography resist develops (~19 times) Pre-furnace cleans (~6 times) HF oxide dips (5 times) Wet resist strips (~19 times) Wet Ti etch (1 time) Un-masked nitride etch (1 time) To me, there's still a lot of wet processing ... and these should be close to "no brainers". Oh I forgot, we are talking about AMD!! Make It So, Yousef