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To: Len Hannegan who wrote (1136)1/26/1998 4:02:00 PM
From: kirk tostige  Read Replies (1) | Respond to of 4710
 
from cmp: Beginning of end for GaAs?

A surge of development in silicon-germanium heterojunction transistor technology could be the undoing of gallium arsenide as an RF technology. SiGe designers say they can get all of the individual transistor speed of GaAs, but with far less noise, much higher uniformity of performance across a wafer, much greater thermal conductivity, and for far less cost, Anthony Cataldo and Ron Wilson write in EE Times.

SiGe proponents predict it will eventually drive GaAs into an ultra-high-speed niche. GaAs is still too difficult for many companies to master due to the inherent instability of arsenic. Unlike silicon, a high percentage of the cost for GaAs is the wafer itself. SiGe's lower cost will o