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To: fellow who wrote (13321)	1/28/1998 10:24:00 PM
From: Tulvio Durand	Respond to of 25960

Are you sure that DUV is excluded in Micron's sub 0.25 um lithography? Previous indications of the general industry's move to 0.25 and sub 0.25 um fabs have been by using the mix-and-match approach wherein critical dimmensions are printed using DUV and noncritical stuff printed by i-line. Using i-line for both would place Micron at a competitive disadvantage due to slower throughputs of i-line-only lithography as described in earlier posts on this thread. Tulvio

To: fellow who wrote (13321)	1/28/1998 11:13:00 PM
From: ForYourEyesOnly	Read Replies (1) \| Respond to of 25960

1/4um devices using i-line: Fujitsu published a new paper about a resist technology to use i-line at 1/4um. They use a layer of standard photoresist for planarization of the features, and then a second layer of Si-doped resist for the pattering. This technique is similar to the one using a BARC (bottom anti reflection coating) and a second layer of resist. Do any of our litho experts know about how this will fair in the market? Fujistu is now trying to market this resist. Good luck, THC