To: Todd D. Wiener who wrote (1387 ) 2/19/1998 3:37:00 PM From: David Lawrence Read Replies (1) | Respond to of 3813
IBM DUMIC Paper Highlights Process Results of Integrated F-HDP/PECVDProcess for Production Use Novellus Systems, Inc. (NASDAQ:NVLS), the productivity and innovation leader in thin film deposition, today announced the first high-volume production implementation of a chemical vapor deposited (CVD) low dielectric constant (low-K) fluorinated High Density Plasma (F-HDP) film for 0.25-micron logic devices. Low-K dielectrics have been widely recognized as a way to maximize the speeds of advanced logic devices because they reduce total device capacitance. In a paper published by IBM Corp. at the Dielectrics for ULSI Multilevel Interconnect Conference, (DUMIC), held in Santa Clara, Calif. this week, IBM reported a total line-to-line capacitance reduction of 12 percent using an F-HDP film as an intermetal dielectric (IMD). According to the paper, this capacitance reduction enables significant increases in clock speeds of the company's most advanced microprocessors. The integration sequence described in the publication combines an F-HDP gap-fill process with an in-situ plasma-enhanced CVD (PECVD) capping layer. This delivers as much as a 50 percent reduction in the overall cost of ownership when compared to conventional IMD schemes where the entire deposition is done by HDP. Wilbert van den Hoek, vice president of Novellus' Dielectrics division, said, "The capacitance reduction and cost-of-ownership improvements shown make this integrated F-HDP/PECVD process the preferred solution for sub-0.25-micron IMD applications. Novellus offers this advanced process on integrated SPEED HDP systems, which are already in wide-spread volume production. By offering such enabling applications on existing equipment, we continue to help our customers develop and implement new technologies while extending their capital investment." James Mitchener, general manager of the Dielectrics division, said, "The ability to provide a proprietary, in-situ PECVD capping layer is unique to the integrated Novellus SPEED systems. Along with productivity and cost-of-ownership advantages, the material characteristics of this capping layer provide device protection from the detrimental effects of long term fluorine migration that are seen with single film F-HDP processes." Mitchener said that the company has been working with several customers for over a year to develop a manufacturable F-HDP solution. "Our single tool F-HDP/PECVD integration has provided a complete solution with a wide process window for production implementation. This is also consistent with Novellus' commitment to provide customers with advanced technology at the lowest cost," Mitchener noted. A typical two micron IMD stack using F-HDP and PECVD can be deposited in the Novellus integrated SPEED system at throughputs greater than 30 wafers per hour, the industry's highest for advanced CVD IMD applications. This implementation in high-volume production of the low-K F-HDP film is the latest validation of the success of the Novellus SPEED HDP system. Since its introduction in February 1996, the SPEED system has attained market leadership in HDP and has become the IMD process tool of record for the world's most advanced semiconductor fabs. Based on current data from independent market research firm, Dataquest (San Jose, Calif.), Novellus SPEED HDP systems have captured more than 65 percent of the worldwide HDP market.