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To: Trader X who wrote (12739)	3/12/1998 10:20:00 AM
From: Trader X	Read Replies (2) \| Respond to of 17305

Surprise surprise, CREE releases news this morning: This would account for yesterday's 18% burst. -- Cree Research Achieves Milestone for High Power Microwave Transistor DURHAM, N.C., March 12 /PRNewswire/ -- Cree Research, Inc. (Nasdaq: CREE - news), the world's leading manufacturer and supplier of silicon carbide (SiC) wafers and SiC-based semiconductor products, today announced it has demonstrated an SiC metal-semiconductor field-effect transistor (MESFET) with an output power of 53 watts under continuous wave operation at a frequency of 3.0 gigahertz. This result was achieved from a single chip with a die area of only 3 square millimeters. John Palmour, Cree's Director of Advanced Devices and a co-founder of the company, commented on the development, ''This unprecedented power from a die with such a small area demonstrates the extremely high power handling capability of SiC microwave devices. Although we are continuing our efforts to make even higher power chips, the result represents a significant advance. We expect this will generate a new level of commercial interest in SiC microwave devices.'' Silicon-based microwave products capable of operating at higher power levels are presently available, but these are typically multiple chip packages. SiC microwave transistors, if packaged in a multiple chip product, could offer output power levels substantially higher than other solid-state products now on the market. SiC transistor products capable of high power operation have potential applications in radio and microwave transmission systems, since higher power levels permit operation over greater distances. These applications include cellular base stations, solid-state television and radio broadcast systems, radar and electronic counter measure systems. No timetable has been established for the release of commercial products based on the result announced by the company. North Carolina-based Cree Research, Inc. is the world leader in the development of silicon carbide semiconductors which have potential advantages in certain optoelectronic, RF and microwave, power, and high temperature applications. Cree owns outright or licenses exclusively 46 U.S. patents and 25 foreign patents related to its process and device technology. --