Discussion of EUV, ArF, Scalpel, and other technology..............
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Posted: 3:00 p.m. EST, 3/13/98
Japan and Europe map plans for extreme-ultraviolet lithography
By David Lammers
KYOTO, Japan - Both Japan and the European Community are laying the groundwork for separate cooperative-research programs into extreme ultraviolet (EUV) lithography, according to participants at the inaugural International Forum on Semiconductor Technology in Kyoto, Japan.
About 330 people discussed next-generation lithography and related issues at the forum, which was organized by Japan's national Association for Super-advanced Electronics Technology (ASET) research project.
The fledgling EUV efforts in Japan and Europe lag those of EUV LLC, an Intel-backed operating which is extending EUV work started at the Lawrence Livermore (Livermore, Calif.) and Sandia (Livermore) U.S. national laboratories. To catch up, as many as 10 Japanese companies may join a private EUV research project that now has three early participants: Nikon Corp., Hitachi Ltd., and the Himeji Institute of Technology. Professor Hiroo Kinoshita, a former NTT Corp. researcher, leads a small EUV research effort at Himeji, located near Osaka.
Japan's government may put public funding behind the EUV project, extending the work begun at ASET on argon-fluoride, electron beam and proximity X-ray lithography. The EUV work may kick off as soon as next year.
In Europe, ASM Lithography and its optics supplier Karl Zeiss have started EUV research, and the European Community has given preliminary approval to "a significant fraction" of a requested $75 million in funding, said Michael Hatzakis, an advisor to the Institute of Microelectronics in Greece. Hatzakis, a retired electron-beam researcher for IBM, evaluated the EUV proposal.
In a separate presentation at the forum, Gerhard Gross, a Siemens AG research manager, said the European "cluster project on future lithography" has started preliminary EUV work, along with investigations into Ion Projection Lithography and direct-write electron-beam lithography. After about a year, the three approaches will be evaluated and a decision will be made about future directions of the research, he said.
Naomichi Abe, a Fujitsu Ltd. lithography manager, said he personally supports EUV as a promising approach. Abe said EUV relies on reflective optics - polished mirrors - rather than the increasingly complex lenses used in refractive optics. Also, the EUV particles are not charged when they hit the wafer, another reason EUV research is gaining support. However, he cautioned that the reflective masks required for EUV lithography are "very complicated."
Still in its infancy Compared with the relatively mature X-ray lithography, the EUV approach is in its infancy. However, the short wavelength of the light holds out the promise that patterns in the 0.05-micron realm and beyond may be possible, using relatively simple optics and a 5:1 reduction-mask scheme.
Taro Okabe, executive director of the Semiconductor Industry Research Institute of Japan, said an EUV project is being discussed in Japan, but emphasized "it is only in the talking stage now. You can't really say that a project is being officially planned now."
One lithography expert said Japan and Europe must support EUV research in order to gather their own intellectual property, thereby earning enough bargaining chips to make an exchange of information with EUV LLC a tenable scenario.
U.S. participants at the forum said that the level of EUV research in Japan and Europe "is very limited compared with the EUV LLC," but that the basic technical strengths in Japan and Europe will ensure gradual progress. U.S. companies involved in the mirror-making and coating processes now being developed in the EUV LLC program have a commercial motivation to sell their products abroad. Japanese companies will bring their own skills to the EUV problem: Matsushita Electric Industrial and Canon Inc. are co-developing mirror-polishing technology.
Richard Freeman, deputy associate director at the Lawrence Livermore National Laboratory, said a number of EUV-related challenges - problems that seemed intractable a few years ago - "have been put to bed," including interferometry, and a way to avoid argon contamination on the surface of the mirrors. Other challenges will be solved soon, Freeman said, including simpler methods of creating the 13-nm-wavelength light, manufacturing the aspheric mirrors and precisely coating the optics. An optimized resist chemistry suitable to EUV light also must be worked out.
Argon fluoride for 0.10 micron More process engineers - but certainly not all - are becoming confident that Argon fluoride-based deep ultraviolet light at 193 nm can be used for 0.10-micron patterning, albeit with expensive phase-shift masks and optics. Several participants at the Kyoto forum said that for the 0.10-micron lithography, ArF-based steppers can be used in a mix-and-match approach with critical mask layers written by means of X-ray, direct-write electron beam or Scalpel, the scanned E-beam approach being developed primarily within Bell Labs, the research arm of Lucent Technologies. Several Japanese companies are expected to join a 10-company consortium backing Scalpel, said Lloyd Harriott, director of the Scalpel project at Bell Labs (Murray Hill, N.J.).
"We will announce the 10 companies very soon, after all the contracts are signed," Harriott said. "There are several Japanese participants, a Korean company, but, unfortunately, no European participants at this time. The majority of consortium members are U.S. semiconductor manufacturers."
Hajime Sasaki, senior executive vice president of NEC Corp., said one attraction of Scalpel is that the self-contained consortium can deal with the intellectual property (IP) issue - a topic that arose repeatedly at the forum - fairly easily. NEC and many other companies have patent cross-licensing agreements with Lucent Technologies. Harriott said that even though Scalpel has benefited from government support, the formation of an international consortium will not pose IP issues. |