Mitsubishi Announces 0.2-um, 256-Mb and 128-Mb PC100 SDRAM Availability
KrF technology used here -- no new equipment needed for migration to 0.18 micron.
SUNNYVALE, Calif.--(BUSINESS WIRE)--May 18, 1998--The Electronic Device Group of Mitsubishi Electronics America Inc. today announced its plan to sample 256-megabit (Mb) and 128-Mb synchronous dynamic random-access memories (SDRAMs) that will support the most stringent PC100 SDRAM specification defined by Intel Corporation.
Manufactured in a 0.2-um CMOS process technology and offering low-power consumption 3.3-volt operation, the PC100 SDRAMs will be available as discrete ICs and as a full array of modules. Applications include high-end servers, workstations and mainframe computers.
The new 256-Mb and 128-Mb devices are targeted for the most stringent "2-2-2" goal for CL2 (Column Address Strobe Latency 2) performance, as described in Intel's PC SDRAM specification. The "2-2-2" nomenclature refers to 2 clock periods for CAS latency, 2 clock periods for RAS to CAS delay (tRCD), and 2 clock periods for RAS precharge (tRP).
Mitsubishi's 256-Mb and 128-Mb PC100 SDRAMs will support an actual clock speed of 143 MHz, although Intel's PC100 specification requires support only for a 100-MHz data bus.
"The new 256-Mb and 128-Mb SDRAMs continue to extend Mitsubishi's role as one of the leading suppliers of advanced PC100 SDRAMs for high-end computing applications," said Cecil Conkle, assistant vice president for memory products at Mitsubishi Electronics America. "For example, Mitsubishi sampled some customers on a 0.25-um version of its 256-Mb DRAM in 1997. Mitsubishi followed that with full support for all three versions of 16-Mb and 64-Mb PC100 SDRAMs validated by Intel's test results, plus additional versions and modules using them. Our module lineup now includes advanced modules using stacked 64-Mb SDRAMs for the broadest range of PC100 support to our customers."
"Mitsubishi is also dedicated to meeting the most challenging performance goals of Intel's PC SDRAM specification to satisfy customer demands," Conkle added. "Today that means PC100; Mitsubishi will continue advancing the speeds supported on cost-effective SDRAMs to even faster speed grades, as required by our customers."
Mitsubishi, which has been mass producing PC100 SDRAMs since 1997, is already among the first DRAM suppliers to have achieved full compliance with PC100 SDRAM specifications for 16-Mb and 64-Mb SDRAMs, according to evaluation test results posted on Intel's developer website at: developer.intel.com.
Mitsubishi's 256-Mb PC100 SDRAM will be available in 64-megaword by 4-bit (64M x 4) and 32M x 8 configurations with data organized in four memory banks; refresh is completed in 8,192 cycles within 64 ms. The 128-Mb device will be available in 32M x 4, 16M x 8, and 8M x 16 configurations with data organized in four memory banks; refresh is completed in 4,096 cycles within 64 ms.
Packaging, availability and pricing
The 256-Mb and 128-Mb PC100 SDRAMs will be available in a 400-mil, 54-pin, thin small outline package (TSOP). The 256-Mb device will support densities up to 512 megabytes (MB) for a single, standard, dual inline memory module (DIMM). A 1-gigabyte (GB) version will also be available using Mitsubishi's stacked TSOP technology. The 128-Mb device will support up to a 256-MB standard DIMM and a 512-MB version using stacked TSOPs.
Samples of the 256-Mb SDRAM will be available in October 1998, with volume production scheduled for the first quarter of 1999. Sample pricing will be $270 each in 100-unit quantities.
Samples of the 128-Mb SDRAM will be available in July 1998, with volume production scheduled for the fourth quarter of 1998. Sample pricing will be $94 each in 100-unit quantities.
As with Mitsubishi's 64-Mb SDRAM product, volume production of the 256-Mb and 128-Mb SDRAMs will employ KrF excimer laser technology on 8-inch wafer lines. There will therefore be no need for a large investment in new production equipment for this generation change. Production is beginning at Mitsubishi Electric Corporation's existing facility in Kumamoto, Japan, later expanding to other production facilities such as Powerchip Semiconductor Corporation in Taiwan.
In the next phase, the 0.18-um production process technology will be employed and volume production will again be expanded to include multiple facilities such as Kumamoto and Powerchip in Taiwan.
About Mitsubishi Electric and Mitsubishi Electronics America Inc.
Mitsubishi Electric Corporation is one of the world's top 10 DRAM suppliers and aggressively develops advanced DRAMs, such as PC100, DDR SDRAM, Direct RDRAM(TM), SLDRAM and other emerging industry-standard DRAM types to support current and future customer requirements. Mitsubishi is the first company to successfully integrate the process technologies of DRAM and processor logic with its highly acclaimed eRAM(TM) technology, and has shipped more embedded DRAM products than all other suppliers combined. Mitsubishi markets its memory products in North America through the Electronic Device Group of Mitsubishi Electronics America Inc.
Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electronics America Inc., are world-class suppliers of semiconductors and electronic products for computers, communications and visual applications. Mitsubishi combines its systems-level expertise and high-level silicon process technology to provide chip, chipset and system-on-chip solutions. The company is ranked among the top 10 worldwide semiconductor suppliers and offers an extensive range of semiconductor-based products in the North American marketplace, including microcontrollers and microprocessors, ASICs, memory ICs, optoelectronic products, microwave GaAs FETs, MPEG codecs and flat-panel displays. Please visit Mitsubishi Electric's worldwide semiconductor website at mitsubishichips.com.
Trademark Information
eRAM is a trademark of Mitsubishi Electronics America Inc. Direct RDRAM is a trademark of Rambus Inc. -0- Note to Editors: This release contains a pound sign in the website name, between the htm and the sdram. This sign may become garbled in certain media points.
CONTACT:
Mitsubishi Electronics America Inc.
John Garner, 408/774-3191
garner-john@edg.mea.com
or
KVO Public Relations
Lori Higa, 650/919-2059
lori-higa@kvo.com
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