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To: Ian@SI who wrote (5460)	5/18/1998 6:08:00 PM
From: Katherine Derbyshire	Read Replies (2) \| Respond to of 10921

"Conventional" interconnect deposition = deposit a blanket metal layer, etch lines in it, fill the lines with oxide, and (optionally) polish the whole thing flat. Repeat for the next layer. "damascene" interconnect deposition = deposit a blanket oxide, etch lines in it, fill the lines with metal, and polish away the excess metal. The biggest motivation for damascene is the extreme difficulty (bordering on impossibility) of etching copper. A secondary motivation is that damascene requires fewer process steps, though the details of that aren't apparent from my simplistic description. "dual damascene" = same as damascene, except you fill two layers of metal (say a wiring layer and a via layer) at the same time. This one really saves process steps, but means you need really good fill technology to get to the bottom of the second layer. Katherine