To: Steve Colameco who wrote (427 ) 5/31/1998 2:43:00 AM From: Beltropolis Boy Respond to of 1214
Electronic Buyers News, June 01, 1998 June 01, 1998, TechWeb NewsNEC to announce California 300-mm-wafer fab By Jack Robertson NEC Corp. today will announce that it is building a 300-mm-wafer fab with 0.15-micron processes that will adjoin an existing fab in Roseville, Calif. The new fab is expected to cost $1.4 billion and enter production in 2002. In addition, NEC is reportedly ready to disclose plans for a 300-mm-wafer fab to be built in Japan. A 300-mm-wafer fab will be capable of making 256-Mbit and 1-Gbit DRAMs, potentially using next-generation 197-nm excimer-laser lithography systems. The combination of 300-mm wafers and 0.15-micron processes will allow far greater yields and output of chips than from 8-in.-wafer, 0.25-micron fabs. In turn, lower costs will lead to very competitive prices, the hallmark of the DRAM market. NEC is now making 16-Mbit DRAMs at Roseville using 0.35-micron processes. The Japanese company had held back on upgrading the U.S. facility while it expanded fabs in Japan and the United Kingdom. But as the need for 300-mm wafers and smaller line geometries grew, Roseville became the next NEC facility in line for advanced processes. The expansion in Roseville follows NEC's strategy of producing leading-edge products in close relation to key markets, according to Hajime Sasaki, NEC's senior executive vice president. The company's plan to begin full 300-mm-wafer production in Roseville in 2002 is in keeping with the expected availability of the advanced equipment that will be needed. Initial tool sets for 300-mm-wafer pilot lines are expected to be qualified by the end of this year or early next year. NEC will gain development experience with the new equipment at R&D centers in Japan and then order production-capable 300-mm-wafer gear. NEC joins a small number of chip companies planning to launch 300-mm-wafer fabs with feature-size processes of 0.15 micron or less. Intel Corp. has said that its first 300-mm-wafer fab, in Fort Worth, Texas, will use 0.13-micron processes. By contrast, Siemens Semiconductor has said that its first 300-mm-wafer fab, which has yet to be given a timetable, could start with 0.18-micron capability. That fab will probably be located in Dresden, Germany. Chip makers such as IBM Microelectronics, STMicroelectronics, Taiwan Semiconductor Manufacturing Co. Ltd., Texas Instruments Inc., and United Microelectronics Corp. have said that they, too, will build 300-mm-wafer fabs, but have set no dates for construction and initial operation. Copyright 1998 CMP Media Inc.techweb.com