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To: TI2, TechInvestorToo who wrote (516)	6/10/1998 12:52:00 PM
From: FJB	Read Replies (2) \| Respond to of 582

0.13æm process using KrF pubs.cmpnet.com Samsung Electronics Co. Ltd., which earlier this week announced that it will close down its DRAM operations in South Korea for one week each month until the market absorbs a glut of 16-Mbit and 64-Mbit chips (Samsung Confirms Plans For "Largest-Ever Shutdown), is pressing on with next-generation technology nevertheless. The company has moved a step closer to production of high-density DRAM chips, and this week will demonstrate a 0.13-micron process technology that will eventually be used to manufacture 4-Gbit memory devices, the company said today. As proof of its intention to move to 4-Gbit memory devices within the next decade, Samsung said it will detail its latest sub-micron process technology at this week's VLSI Symposium in Hawaii. The 0.13-micron process is 30% more integrated than the company's 0.18-micron design rule which Samsung developed in November 1996 for production of 1-Gbit DRAM. The new process maintains commodity production costs by using standard KrF Excimer lithography equipment, allowing the company to overcome light wavelength and refraction limitations without switching to more expensive ArF Excimer, X-ray or electron beam technology. Samsung said the innovation will enable it to bring 4-Gbit chips to market three years earlier than previously expected. The process may also be applied to lower density chips to dramatically decrease production costs. The DRAM industry is currently in the midst of a shift to 64-Mbit devices, with a transition to 128-Mbit and 256-Mbit chips expected to follow in the next two years. A single 4-Gbit DRAM is able to store about 32,000 standard newspaper pages, 1,600 still pictures or 64 hours of sound data.