SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?


To: Paul Engel who wrote (34276)7/12/1998 11:06:00 AM
From: Yousef  Read Replies (1) | Respond to of 1571808
 
Paul,

Re: "I believe Intel was working on EPI raised Source-Drain technology - perhaps you
have more up to date information?"

The most recent info that I have heard is that .18um processing will use
"halo" (angled compensation implants) implants to reduce the "reverse
short channel effects (RSCE) and In (Indium) channel implants for P-channel
Vt adjusts. I know that work has been done on raised S/D using SiGe selective
epitaxy, but I wasn't sure how far along this was.

BTW, the .18um process will be a full 30% performance boost over .25um (just
like the gain going from .35um -> .25um) ... and it will be in production
volume next year, '99.

Regards,
Yousef