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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Maxwell who wrote (35258)	7/30/1998 12:51:00 AM
From: Yousef	Read Replies (1) \| Respond to of 1572549

Maxwell, Re: "You see Yousef I am not kidding you when I talk about advanced dual damascene ..." You must be kidding, Maxwell ... No one would ever use such a process. There are many control issue with such a scheme. The flow I gave is the one that will be used, while your's is a "made up" hallucination. BTW, what resists and developers do you use that have those characteristics ... Vendors and product numbers, please ... didn't think so. You must still be "clowning around", Maxwell. Make It So, Yousef

To: Maxwell who wrote (35258)	7/30/1998 11:20:00 PM
From: Yousef	Respond to of 1572549

Maxwell, Re: "2) Etch Step: Etch is a complicated in-situ process a) You first etch the SiO2. This etch process must have good selectivity to exposed R1. In this step, you only etch the contact and the trench are masked by exposed R1. This is a time etch process. b) When the time is finished you then in-situ change the gas to etch the exposed R1. This must also have good selectivity to SiO2 or to whatever dielectric you use. This can be an end-point process. Once the end point is finished then you change your gas back to etch your SiO2 in the trenches and contacts. By the time you finish the trenches and contacts have been formed to your desire." I will say this etch is "complicated", Maxwell ... but ... you left out another important requirement for the etch. That is when you go to step (b) and are etching the bottom resist (R1) then somehow, this etch must not be removing any of the top resist (R2). This seems impossible. Also these two "magical" resists, are they both exposed at 248nm wavelength ?? Your "mythical" damascene process is falling apart, Maxwell ... as they say, "The devil is in the details". Make It So, Yousef