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To: flickerful who wrote (7000)9/8/1998 8:17:00 AM
From: MileHigh  Read Replies (2) | Respond to of 93625
 
Thread,

Serious question...At what point should we start thinking about below technology as it relates to DRAM market? Is it a serious threat?

All comments welcome

MileHigh

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TOKYO (Nikkei)-Fujitsu Ltd. has developed technology that dramatically increases the capacity of ferroelectric random-access memories, company sources said Monday. FeRAM chips are expected to eventually replace dynamic random-access memories in personal computers.

Fujitsu claims the technology could boost FeRAM capacity to between 64 megabits and 1 gigabit. FeRAMs currently in mass-production offer capacity of 64 kilobits, while one prototype has capacity of 1 megabit.

The new approach reduces the thickness of capacitors used on chips to 50 nanometers, which compares with a lower limit of 100-200 nanometers using conventional technology.

Plans call for releasing semiconductors with the new technology in the year 2000, by which time the market for FeRAMs should be worth $4 billion annually, according to Fujitsu estimates. The company expects the market to top $10 billion by 2002.

(The Nihon Keizai Shimbun Tuesday morning edition)