SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : JMAR Technologies(JMAR) -- Ignore unavailable to you. Want to Upgrade?


To: CASHSWISS who wrote (6694)9/18/1998 12:51:00 AM
From: Starlight  Read Replies (1) | Respond to of 9695
 
I have a feeling that no one bothered to access the URL I posted above, so I'm going to print the page here: (From the DARPA site)



Advanced Lithography

The goal of the Advanced Lithography program is to develop lithographic technologies
for the generation and transfer of highly complex patterns, particularly microelectronics
and micromechanical structures. The program is investigating electronics manufacturing
technologies for the pattern transfer of patterns at sub 0.10 micron resolution over field
areas in excess of 1,000 mm2.

The challenges posed by the more conventional lithographic approaches present
opportunities for innovative solutions in maskless writing, new imaging materials,
metrology, and exploitation of recent developments such as proximal probes and
quantum structures. DARPA investments will be used to lower important technical
barriers and demonstrate proof of the concept. During these developments, DARPA
will work industry to establish a timely transition to industry after prototyping.

Maskless lithography offers high payoff in the form of (1) lowered costs for low volume applications and (2) rapid turn around and design flexibility during new product developments. Innovative materials will provide solutions for the continued push toward smaller geometries. Inorganic resist materials show promise for improved resolution, edge definition and etch resistance. Self assembly brings a new dimension to pattern formation. Charged particle beams offer a variety of solutions, including high resolution, high depth of focus for MEMS fabrication, switching for maskless lithography, metrology, and enhanced milling or deposition of materials for mask repair. The several candidate exposure sources offering sub 0.1 micron features will be studied with the goal of understanding critical barriers and ultimately overcoming them.

Under a Memorandum of Agreement between the Navy and DARPA, the Navy is to assume responsibility for the near term lithography technology developments. These include proximity x-ray (mask technology and point source) and near-term cross-cutting (mask writing and stage control) developments.

Advancements in lithographic technology are essential to exploit the military benefits to
be derived from the use of semiconductors in essentially all defense systems. The
development of faster, smaller computational and signal processing components
manufactured through advanced lithographic processes offers opportunities in a variety
of military systems, such as real time threat identification, target recognition, autonomous
operation, surveillance, and smart sensors. New opportunities will arise with the advent
of the digital soldier, who will require improved mobility and faster transmission of
information to improve survivability, situational awareness, and lethality.

Other Related Advanced Lithography Web Sites

The DARPA program manager for this effort is:

Dr. David O. Patterson (703) 696-2276 (phone), (703) 696-2206 (fax), and email:
dpatterson@darpa.mil.

Last Updated: Aug 7, 1998