To: CASHSWISS who wrote (6694 ) 9/18/1998 12:51:00 AM From: Starlight Read Replies (1) | Respond to of 9695
I have a feeling that no one bothered to access the URL I posted above, so I'm going to print the page here: (From the DARPA site) Advanced Lithography The goal of the Advanced Lithography program is to develop lithographic technologies for the generation and transfer of highly complex patterns, particularly microelectronics and micromechanical structures. The program is investigating electronics manufacturing technologies for the pattern transfer of patterns at sub 0.10 micron resolution over field areas in excess of 1,000 mm2. The challenges posed by the more conventional lithographic approaches present opportunities for innovative solutions in maskless writing, new imaging materials, metrology, and exploitation of recent developments such as proximal probes and quantum structures. DARPA investments will be used to lower important technical barriers and demonstrate proof of the concept. During these developments, DARPA will work industry to establish a timely transition to industry after prototyping. Maskless lithography offers high payoff in the form of (1) lowered costs for low volume applications and (2) rapid turn around and design flexibility during new product developments. Innovative materials will provide solutions for the continued push toward smaller geometries. Inorganic resist materials show promise for improved resolution, edge definition and etch resistance. Self assembly brings a new dimension to pattern formation. Charged particle beams offer a variety of solutions, including high resolution, high depth of focus for MEMS fabrication, switching for maskless lithography, metrology, and enhanced milling or deposition of materials for mask repair. The several candidate exposure sources offering sub 0.1 micron features will be studied with the goal of understanding critical barriers and ultimately overcoming them. Under a Memorandum of Agreement between the Navy and DARPA, the Navy is to assume responsibility for the near term lithography technology developments. These include proximity x-ray (mask technology and point source) and near-term cross-cutting (mask writing and stage control) developments. Advancements in lithographic technology are essential to exploit the military benefits to be derived from the use of semiconductors in essentially all defense systems. The development of faster, smaller computational and signal processing components manufactured through advanced lithographic processes offers opportunities in a variety of military systems, such as real time threat identification, target recognition, autonomous operation, surveillance, and smart sensors. New opportunities will arise with the advent of the digital soldier, who will require improved mobility and faster transmission of information to improve survivability, situational awareness, and lethality. Other Related Advanced Lithography Web Sites The DARPA program manager for this effort is: Dr. David O. Patterson (703) 696-2276 (phone), (703) 696-2206 (fax), and email: dpatterson@darpa.mil. Last Updated: Aug 7, 1998