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To: FJB who wrote (552)	10/22/1998 1:16:00 PM
From: orkrious	Read Replies (1) \| Respond to of 582

Conference call #800-633-8264 Reservation #4708264 Jay

To: FJB who wrote (552)	12/15/1999 10:30:00 PM
From: FJB	Respond to of 582

LITHOGRAPHERS SEE POSSIBILITIES FOR TWO NGL TECHNOLOGIES Participants gave their opinions on the progress of the NGL technologies and their preferences for which technologies to use at different feature sizes in a survey at the conclusion of the three-day workshop. The following technologies were the top preferences in nodes defined by the International Technology Roadmap for Semiconductors: 130 nm: 193 nm optical and 248 nm optical 100 nm: 193 nm optical and 157 nm optical 70 nm: 157 nm optical, EPL and EUV 50 nm: EUV and EPL 35 nm: EUV and EPL Participants believed good progress had been made by all of the technology champions. For EUV, the survey showed progress in all of its critical issues, which included: defect free multi-layer coated ultra low expansion blank and mask manufacturing; full field optical design; cost of ownership; reticle defect control solution; source and condenser optics reliability; resist capability for the 70 nm node; effective contamination control of optical path; and, defect density scaling below 80 nm. For EPL, the survey showed progress in all of its critical issues, which included: experimental data on beam blur and relation to CD control; experimental verification of proposed solution for wafer heating; experimental verification of seam blending/stitching strategy; defect free mask manufacturing at 70 nm with stress control for membrane and stencil masks; demonstration of real time electron alignment capability for all levels; cost of ownership; reticle defect control solution; and demonstration of proximity correction and mask biasing including process window. sematech.org