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To: John J. Riley who wrote (529)10/30/1998 10:08:00 AM
From: kinkblot  Respond to of 1820
 
Increased use of HBT Device Wafers for fiberoptic transmission ICs
is again mentioned among the 'Operating Highlights' in the earnings report:

We also see growing acceptance of our device wafers for gigabit circuits for fiberoptic transmission...
....................

Links to web pages for some Rockwell fiberoptic devices based on GaAs HBT:

~ Data conversion IC for 2.5 Gb/s transmission from the SONET/SDH tranceiver chipset introduced in February by RSS' Network Access division:
rss.rockwell.com

~ WEST (WDM with Electronic Switching Technology), a DARPA-supported project for development of a 4x10 Gb/s WDM Switch:
rsc.rockwell.com

The WEST Transmitter Modules have an integrated GaAs HBT laser driver circuit, and Receiver Modules have integrated GaAs amplifiers for operation in "strictly linear mode". The 12 x 12 Crosspoint Switch is a single LSI circuit built using Rockwell's GaAs HBT technology. It is capable of handling 12 input data streams at bit rates up to 10 Gb/s each and producing 12 output data streams corresponding to any possible permutation of the input streams. This appears to be well on its way towards commercialization.

1997 Project Summary, with FY-98 Plans and Technology Transition:
darpa.mil

WT