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To: Boplicity who wrote (9305)	11/6/1998 6:43:00 PM
From: MulhollandDrive	Respond to of 93625

more otototot I've been following Donald Sew over on the TSO thread and he's done some pretty good TA on DELL (this is short term stuff tho). Go over there and bookmark his name and look up his messages on DELL. I just lucked out on Oct. 8 when it was tanking and got some shares in the low 40's for a trade (yikes!), but I haven't sold yet, getting itchy fingers. bp

To: Boplicity who wrote (9305)	11/6/1998 10:51:00 PM
From: MileHigh	Read Replies (1) \| Respond to of 93625

Bandwidth looms as key issue for ISSCC confab By Ron Wilson EE Times (11/06/98, 1:40 p.m. EDT) SAN FRANCISCO — The 1999 IEEE International Solid-State Circuits Conference (ISSCC), to be held next February, will explore facets of the perplexing pursuit of bandwidth in the search to slake the unquenchable thirst of a media-laden culture. Process advances will highlight the conference in San Francisco, as a special joint session will outline the coming-of-age of commercial silicon-on-insulator (SOI) processes. IBM Microelectronics, for example, will describe PowerPC 603 and 750 processors retargeted directly from bulk CMOS to an implanted-oxygen-layer SOI process. The company will report performance gains of up to 30 percent from the process change alone, without any re-optimization of circuits. Similarly, Samsung Semiconductor will describe a 600-MHz Alpha processor and a low-power 16-Mbit DRAM, both implemented in their own SOI process. Battling DRAMs Memory papers will also reflect the bandwidth quest, with an intense battle heating up between rival dual-data-rate, Synclink and Direct Rambus DRAM interfaces. Other papers will report increases in both the size and speed of embedded memory, with the pack led by a 1.5-Mbyte, 1.8-ns on-chip cache on the latest version of Hewlett-Packard Co.'s PA-RISC 8500 CPU, with 140 million transistors. With processors and memory accelerating, communications links are racing to keep up. Advanced digital-subscriber-line hardware will attract the majority of attention, with five papers on high-linearity, low-noise xDSL front-end chips, and a million-transistor, single-chip 52-Mbit/second QAM modem. The communications industry will also mine new process possibilities. As RF designers begin to view silicon germanium as a mainstream alternative, the result will be BiCMOS processes with high CMOS logic density and 50-GHz speeds. But circuit innovations will play their own role at the conference. Level One Communications Inc. will describe a single-chip, direct-conversion transceiver for 900-MHz spread-spectrum digital cordless handsets. In perhaps the most unusual paper of the conference, a University of Michigan researcher will describe the use of micromechanical beams as variable air-gap capacitors. By varying the bias voltage on the beam, the air gap between beam and baseplate can be changed, varying the capacitance on an inherently high-Q capacitor and producing tunable bandpass filters.