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To: FJB who wrote (20256)	11/21/1998 11:39:00 PM
From: Greg Jung	Read Replies (1) \| Respond to of 25960

The new model (5100?) have greater lifespan and more economical operation than the 5000, in the same form factor. However they sell an "upgrade kit" that makes the 5000 unit about as good as the new model. They anticipate the customers taking advantage of this and so not making use of some of the spare parts for mainenance of the 5000, hence the anticipated inventory correction in the next quarter. The 6000 series (?1 in evaluation) will be used in new tools and won't be fitted to the old tools. Greg

To: FJB who wrote (20256)	11/24/1998 12:01:00 PM
From: BillyG	Read Replies (1) \| Respond to of 25960

IBM's experimental "hot electron lithography" uses Fowler-Nordheim tunneling as a lithography tool......... eet.com Excerpt (click on the link for a diagram of the process): <<Hot-electron litho Scientists at IBM Watson have come up with an alternative to the electron, ion and X-ray lithography schemes that have been proposed: hot-electron emission lithography. The scheme uses a mask manufactured by standard MOS technology that is applied in a 1:1 projection system. It can print ICs with an exposure time of only a few seconds, and the mask's lifetime is 300,000 exposures. This hot-electron mask is based on a tunnel cathode formed by a SiSiO2Al junction and has been pursued by a number of industry researchers. IBM has produced a projection system for printing 160-nm lines on an entire wafer in an e-beam resist. The mask is based on a silicon wafer patterned with an oxide of two discrete thicknesses. A thin-metal layer on top of the mask is used as the gate electrode. Biasing this electrode positively allows electrons to tunnel from the substrate into the oxide, where they are ballistically accelerated. Some of the hot electrons pass through the thin gate electrode and are emitted into the vacuum. Tunneling depends exponentially on the oxide thickness according to the Fowler-Nordheim equations; thus, large emission contrast is obtained between regions of thinner and thicker oxide. The researchers said the two oxide thickness values were chosen as a compromise among competing goals: long mask lifetime (a small oxide field); short exposure times (a large oxide field); high emission contrast; and mechanical stability for mounting. Research-staff member Markus Poppeller, in a paper submitted to Applied Physics Letters this month, states that the theoretical resolution limit for the experimental conditions used is 90 nm. Calculations show that the resolution of the system can be improved by a factor of two by increasing the electron acceleration voltage by a corresponding factor of two, or by cutting the gap between target wafer and mask in half, according to Poppeller and his team. "We have been working on this research for two years," he said at the Science Day event, "and we believe that hot-electron emission masks and 1:1 HEEL provide new opportunities for sub-100 nm lithography, without going to a fancy, novel exposure system like X-ays or direct e-beam.">>