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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Paul Engel who wrote (43508)	12/16/1998 1:53:00 PM
From: Maxwell	Read Replies (3) \| Respond to of 1573142

Paul: <<Your contributions, such as "Katmai Sucks", are not only juvenile but quite worthless.>> #1. How do you know I am not a juvenile? #2. Katmai Sucks is my opinion based upon the hype of KNI and the resulting benchmark shown in that article. #3. What make you think your posts are worthwhile of reading? <<Yousef added a few details on the lithography, Shallow Trench Isolation, and FET drive currents that were not covered in the Intel IEDM paper.>> This is my grandma told me of Intel 0.18um process. She knows more process technology than Yousef. If you want to know how she know, I gave her the IEDM paper my friend sent me. Shallow Trench Isolation= 530nm deep Minimum N+ to P+ spacing= 560nm N+ capacitance= 0.65 fF/um^2 at 0V P+ capacitance= 0.95 fF/um^2 at 0V TiSi2 sheet rho= 3 ohms/sq. gate oxide= 30nm measured at 1.5V Idsat (NMOS) = 940 uA/um at 1.5V Idsat (PMOS) = 420 uA/um at 1.5V SRAM cell size= 2.22um x 2.52um = 5.59 um^2 16M bit SRAM die size = 207 mm^2 SRAM operates > 900MHz at 1.5V Lgate= 130nm for NMOS Lgate= 150nm for PMOS Inverter gate delay < 13psec at 1.3V and <11 psec at 1.5V <<Nervous, Maxwell?>> Keep on hyping the KNI Katmai. Maxwell