Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Technology Stocks : Cymer (CYMI) -- Ignore unavailable to you. Want to Upgrade?

To: FJB who wrote (20472)	12/18/1998 9:33:00 AM
From: Zeev Hed	Read Replies (2) \| Respond to of 25960

Robert, I do not see why not in principle. The "Proximity X-Ray Lithography system contemplates using as an X-Ray source the synchrotron radiation from an Electron Storage ring (one of the electron sources for FEL, the other is typically a linac (linear accelerator). The tunability of an FEL is not required for lithography, thus a fixed electron source and a fixed wigler tuned to let say 50 to 100 nm should be a much lower cost systems then the experimental FEL now in the field. I would guess that a light source selling for under a million bucks could be done and it would be competitive with most of the current schemes contemplated. The question of appropriate masks will still remain a critical element, but that is the same story with any post photonic based lithography system. Since the FEL is contemplated as a very high energy system (some even for :defense applications, I believe), energy should not be the limiting factor. Zeev

To: FJB who wrote (20472)	12/18/1998 4:30:00 PM
From: BillyG	Respond to of 25960

Matsushita, Mitsubishi to collaborate on 0.15-micron technology eet.com By Yoshiko Hara EE Times (12/18/98, 2:22 p.m. EDT) TOKYO — Matsushita and Mitsubishi have become R&D partners for the next generation of system-on-a-chip designs with an agreement to share R&D costs and exchange technologies. Under the five-year agreement, Matsushita Electric Industrial Co. Ltd., its Matsushita Electronics Corp. subsidiary, and Mitsubishi Electric Corp. will work together to develop 0.15-micron process technology as an initial target, then 0.13-micron technology as a next step. “Matsushita is strong in logic, while Mitsubishi is strong in DRAM and embedded DRAM technologies,” said Susumu Koike, director of Matsushita's corporate semiconductor development division. “The two companies have complementary expertise, which are the basis for this joint plan.” By developing a common process technology, the companies will be able to make a flexible production plan and will also be able to serve as second sources for each other. “The process of the two companies is about 80 percent [similar],” said Koichi Nagasawa, general manager of semiconductor group at Mitsubishi. “So we could find mutual concession for the remaining disaccords.” Matsushita operates semiconductor laboratories in Kyoto and Mitsubishi has laboratories close by in Itami. The companies will invest about $430 million and plan to assign about 100 engineers to the joint R&D effort, the cost of which will be shared evenly. The collaboration may expand into some form of joint production in the future. Matsushita and Mitsubishi plan to introduce parts in 0.15-micron technology in 2000, at which point they hope to be ahead of competitors. They plan to establish volume production of 0.13-micron technology by the end of 2001. “In this harsh semiconductor environment, Japanese manufacturers have to take some action such as alliance and merger," said Michito Kimura, semiconductor analyst at IDC Japan. "But before the alliance for the two generation ahead, more practical measures for current and near future generation SOCs [systems-on-a-chip] may be needed to improve [the current market's] price competition, even for SOCs.”