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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: kash johal who wrote (47333)	1/25/1999 10:01:00 PM
From: Scumbria	Respond to of 1571405

Kash, reasons Intel may be adding flash to the CPU process. Beginning with PII, Intel has had reprogrammable microcode. I don't think this is anything new for them. Scumbria

To: kash johal who wrote (47333)	1/25/1999 10:17:00 PM
From: Paul Engel	Read Replies (1) \| Respond to of 1571405

Kash - Re: "Do you know of any other reasons Intel may be adding flash to the CPU process. A "bi-partisan" factual answer would be appreciated." All your questions should be answered by the following: companysleuth.com PATENT No: 5852712 ISSUE DATE: Dec-22-1998 *Microprocessor having single poly-silicon EPROM memory for programmably controlling optional features* ABSTRACT: A CMOS microprocessor chip includes an on-chip single-poly EPROM that is process compatible with the CMOS process used to manufacture the microprocessor. The EPROM is used to store manufacturing and contract related data such as serial number, customer, and process related data such as wafer number test results, binning data, etc. This provides important information for quality and reliability control. The EPROM is also used to control selection of optional microprocessor features such as speed governing, pin-out and I/O bus interface configuration. A third use is for trimming of critical circuit elements and for cache redundancy fault control. {==================================} Paul

To: kash johal who wrote (47333)	1/25/1999 10:47:00 PM
From: Yousef	Read Replies (1) \| Respond to of 1571405

Kash, Re: "Pentium ID flash ... Yousef, would welcome your thoughts ... A "bi-partisan" factual answer would be appreciated." Kash, I will give you my thoughts and experience at .25um ... First, the FET's in Intel's .25um process were designed (implants, thermal cycles , gate thickness, gate length ...) to provide high drive currents at 1.8V +- 10%. I don't believe that there are any additional processing steps (extra poly, thicker oxides, other furnace steps ...) to incorporate a "flash" memory capability. The additional thermal cycles would "de-optimize" the FET's. However, Intel's .25um process does have poly "fuse" structures that can be agglomorated (change to high resistance) electrically at test. Thus an ID could be programmed into some type of poly fuse structure. This is my best guess ... Hope this helps. Make it So, Yousef