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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: RDM who wrote (51155)2/26/1999 9:21:00 PM
From: Yousef  Respond to of 1572057
 
RDM,

Re: "I understood that there was a silicon nitride or other secret dielectric
layer on top to the 42A electrical thickness layer."

No RDM, there is not a silicon nitride layer ... After gate oxide growth,
the oxide is annealed in a Rapid Thermal Processor in a nitrogen environment
that allows nitrogen to become incorporated in the oxide and reduce any
fixed charges. Maybe this is what you are referring to ... However, this
anneal doesn't change the gate thickness appreciably.

Hope this helps.

Make It So,
Yousef



To: RDM who wrote (51155)2/26/1999 10:30:00 PM
From: RDM  Respond to of 1572057
 
I think that you are probably correct. The nitrogen anneal may be the source of the upper layer. I did not know how it was done, but only that it was shown at being thinner than the silicon oxide beneath. It could be the part of the difference between the optical and electrical measurement. The total thickness numbers I have seen referred to are only slightly larger than yours anyway with 50 electrical angstroms being the smallest.


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