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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Paul Engel who wrote (51177)2/27/1999 9:48:00 AM
From: Yousef  Read Replies (1) | Respond to of 1571927
 
Paul,

Re: "Intel's 0.25 micron process uses a 40.8 Angstrom Thermally grown Silicon
Dioxide gate thickness."

Paul, I believe that this is their "electrical" gate oxide thickness and
not the physical thickness. Do you know if AMD's 35A oxide thickness is
physical or electrical ??

Make It So,
Yousef



To: Paul Engel who wrote (51177)2/27/1999 7:10:00 PM
From: Ali Chen  Read Replies (1) | Respond to of 1571927
 
Pal, <AMD's 0.25 micron process uses a 35 Angstrom Thermally grown Silicon Dioxide Gate thickness - 12% THINNER than Intel's.
Source - 1999 IEEE Soild State Circuits Conference.>

Incidentally, does the article ever mention K6?

Crawl back to your garage, and do your measurements
again!


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